NVMTS1D6N10MCTXG onsemi
Hersteller: onsemiDescription: PTNG 100V SINGLE NCH PQFN8X8 STD
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 273A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 90A, 10V
Power Dissipation (Max): 5W (Ta), 291W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 57000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 4.81 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NVMTS1D6N10MCTXG onsemi
Description: PTNG 100V SINGLE NCH PQFN8X8 STD, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 273A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 90A, 10V, Power Dissipation (Max): 5W (Ta), 291W (Tc), Vgs(th) (Max) @ Id: 4V @ 650µA, Supplier Device Package: 8-DFNW (8.3x8.4), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 50 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVMTS1D6N10MCTXG nach Preis ab 4.89 EUR bis 10.14 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
NVMTS1D6N10MCTXG | Hersteller : onsemi |
Description: PTNG 100V SINGLE NCH PQFN8X8 STD Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 273A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 90A, 10V Power Dissipation (Max): 5W (Ta), 291W (Tc) Vgs(th) (Max) @ Id: 4V @ 650µA Supplier Device Package: 8-DFNW (8.3x8.4) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 58501 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
| NVMTS1D6N10MCTXG | Hersteller : onsemi |
MOSFETs Single N-Channel Power MOSFET 100V, 273A, 1.7mohm |
auf Bestellung 2302 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
| NVMTS1D6N10MCTXG | Hersteller : ON Semiconductor |
N-Channel MOSFET |
Produkt ist nicht verfügbar |
||||||||||||||
| NVMTS1D6N10MCTXG | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 146W Case: DFNW8 Mounting: SMD Kind of package: reel; tape Gate charge: 106nC On-state resistance: 1.7mΩ Drain-source voltage: 100V Drain current: 273A Pulsed drain current: 900A Gate-source voltage: ±20V Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
| NVMTS1D6N10MCTXG | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 146W Case: DFNW8 Mounting: SMD Kind of package: reel; tape Gate charge: 106nC On-state resistance: 1.7mΩ Drain-source voltage: 100V Drain current: 273A Pulsed drain current: 900A Gate-source voltage: ±20V Kind of channel: enhancement |
Produkt ist nicht verfügbar |