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NVMTSC1D3N08M7TXG

NVMTSC1D3N08M7TXG onsemi

nvmtsc1d3n08m7-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 80V 46A/348A 8DFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 348A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 80A, 10V
Power Dissipation (Max): 5.1W (Ta), 287W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14530 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+3.94 EUR
Mindestbestellmenge: 3000
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Technische Details NVMTSC1D3N08M7TXG onsemi

Description: MOSFET N-CH 80V 46A/348A 8DFNW, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 348A (Tc), Rds On (Max) @ Id, Vgs: 1.25mOhm @ 80A, 10V, Power Dissipation (Max): 5.1W (Ta), 287W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-DFNW (8.3x8.4), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14530 pF @ 40 V, Grade: Automotive, Qualification: AEC-Q101.

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NVMTSC1D3N08M7TXG NVMTSC1D3N08M7TXG Hersteller : onsemi NVMTSC1D3N08M7-D.PDF MOSFETs PT7 80V DC PQFN8*8 EXPANSION
auf Bestellung 1669 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.92 EUR
10+6.6 EUR
100+4.8 EUR
1000+4.68 EUR
3000+4.07 EUR
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NVMTSC1D3N08M7TXG NVMTSC1D3N08M7TXG Hersteller : onsemi nvmtsc1d3n08m7-d.pdf Description: MOSFET N-CH 80V 46A/348A 8DFNW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 348A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 80A, 10V
Power Dissipation (Max): 5.1W (Ta), 287W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14530 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 11055 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.86 EUR
10+6.63 EUR
100+4.82 EUR
Mindestbestellmenge: 2
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NVMTSC1D3N08M7TXG Hersteller : ON Semiconductor nvmtsc1d3n08m7-d.pdf N Channel Power MOSFET
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NVMTSC1D3N08M7TXG Hersteller : ONSEMI nvmtsc1d3n08m7-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 348A; Idm: 900A; 144W; TDFNW8
Kind of package: reel; tape
Gate charge: 196nC
On-state resistance: 1.25mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 144W
Drain current: 348A
Pulsed drain current: 900A
Case: TDFNW8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
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