NVMTSC1D3N08M7TXG onsemi
Hersteller: onsemi
Description: MOSFET N-CH 80V 46A/348A 8DFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 348A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 80A, 10V
Power Dissipation (Max): 5.1W (Ta), 287W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14530 pF @ 40 V
Qualification: AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 5.33 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details NVMTSC1D3N08M7TXG onsemi
Description: MOSFET N-CH 80V 46A/348A 8DFNW, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 348A (Tc), Rds On (Max) @ Id, Vgs: 1.25mOhm @ 80A, 10V, Power Dissipation (Max): 5.1W (Ta), 287W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-DFNW (8.3x8.4), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14530 pF @ 40 V, Qualification: AEC-Q101.
Weitere Produktangebote NVMTSC1D3N08M7TXG nach Preis ab 5.37 EUR bis 13.99 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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NVMTSC1D3N08M7TXG | onsemi |
MOSFETs PT7 80V DC PQFN8*8 EXPANSION |
auf Bestellung 9444 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMTSC1D3N08M7TXG | onsemi |
Description: MOSFET N-CH 80V 46A/348A 8DFNW Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 348A (Tc) Rds On (Max) @ Id, Vgs: 1.25mOhm @ 80A, 10V Power Dissipation (Max): 5.1W (Ta), 287W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFNW (8.3x8.4) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14530 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMTSC1D3N08M7TXG |
|
Hersteller: onsemi
MOSFETs PT7 80V DC PQFN8*8 EXPANSION
MOSFETs PT7 80V DC PQFN8*8 EXPANSION
auf Bestellung 9444 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.51 EUR |
| 10+ | 8.43 EUR |
| 100+ | 6.09 EUR |
| 500+ | 5.71 EUR |
| 1000+ | 5.37 EUR |
| NVMTSC1D3N08M7TXG |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 46A/348A 8DFNW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 348A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 80A, 10V
Power Dissipation (Max): 5.1W (Ta), 287W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14530 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 46A/348A 8DFNW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 348A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 80A, 10V
Power Dissipation (Max): 5.1W (Ta), 287W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14530 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.99 EUR |
| 10+ | 9.44 EUR |
| 50+ | 7.49 EUR |
| 100+ | 6.85 EUR |
| 500+ | 6.52 EUR |