auf Bestellung 3986 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.42 EUR |
| 10+ | 7.22 EUR |
| 100+ | 5.83 EUR |
| 500+ | 5.65 EUR |
| 1000+ | 5.21 EUR |
| 3000+ | 4.42 EUR |
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Technische Details NVMTSC4D3N15MC onsemi
Description: PTNG 150V IN CEBU DFNW 8X8 DUAL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 165A (Tc), Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V, Power Dissipation (Max): 5W (Ta), 292W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 521µA, Supplier Device Package: 8-TDFNW (8.3x8.4), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVMTSC4D3N15MC
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NVMTSC4D3N15MC | Hersteller : onsemi |
 Description: PTNG 150V IN CEBU DFNW 8X8 DUALPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 165A (Tc) Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V Power Dissipation (Max): 5W (Ta), 292W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 521µA Supplier Device Package: 8-TDFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V Grade: Automotive Qualification: AEC-Q101 |
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NVMTSC4D3N15MC | Hersteller : onsemi |
Description: PTNG 150V IN CEBU DFNW 8X8 DUAL Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 165A (Tc) Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V Power Dissipation (Max): 5W (Ta), 292W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 521µA Supplier Device Package: 8-TDFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| NVMTSC4D3N15MC | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 165A; Idm: 900A; 146W; TDFNW8 Kind of package: reel; tape Pulsed drain current: 900A Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Case: TDFNW8 Gate charge: 79nC On-state resistance: 4.45mΩ Power dissipation: 146W Gate-source voltage: ±20V Drain-source voltage: 150V Drain current: 165A |
Produkt ist nicht verfügbar |