NVMTSC4D3N15MC onsemi
Hersteller: onsemi
Description: PTNG 150V IN CEBU DFNW 8X8 DUAL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 165A (Tc)
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V
Power Dissipation (Max): 5W (Ta), 292W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 521µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V
Grade: Automotive
Qualification: AEC-Q101
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Technische Details NVMTSC4D3N15MC onsemi
Description: PTNG 150V IN CEBU DFNW 8X8 DUAL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 165A (Tc), Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V, Power Dissipation (Max): 5W (Ta), 292W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 521µA, Supplier Device Package: 8-TDFNW (8.3x8.4), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVMTSC4D3N15MC
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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NVMTSC4D3N15MC | onsemi |
Description: PTNG 150V IN CEBU DFNW 8X8 DUAL Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 165A (Tc) Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V Power Dissipation (Max): 5W (Ta), 292W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 521µA Supplier Device Package: 8-TDFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NVMTSC4D3N15MC | onsemi |
MOSFETs PTNG 150V IN CEBU DFNW 8X8 DUAL COOL FOR AUTOMOTIVE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NVMTSC4D3N15MC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 165A; Idm: 900A; 146W; TDFNW8 Kind of package: reel; tape Case: TDFNW8 On-state resistance: 4.45mΩ Mounting: SMD Pulsed drain current: 900A Power dissipation: 146W Gate charge: 79nC Polarisation: unipolar Drain current: 165A Kind of channel: enhancement Drain-source voltage: 150V Type of transistor: N-MOSFET Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NVMTSC4D3N15MC |
|
Hersteller: onsemi
Description: PTNG 150V IN CEBU DFNW 8X8 DUAL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 165A (Tc)
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V
Power Dissipation (Max): 5W (Ta), 292W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 521µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Description: PTNG 150V IN CEBU DFNW 8X8 DUAL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 165A (Tc)
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V
Power Dissipation (Max): 5W (Ta), 292W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 521µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMTSC4D3N15MC |
|
Hersteller: onsemi
MOSFETs PTNG 150V IN CEBU DFNW 8X8 DUAL COOL FOR AUTOMOTIVE
MOSFETs PTNG 150V IN CEBU DFNW 8X8 DUAL COOL FOR AUTOMOTIVE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMTSC4D3N15MC |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 165A; Idm: 900A; 146W; TDFNW8
Kind of package: reel; tape
Case: TDFNW8
On-state resistance: 4.45mΩ
Mounting: SMD
Pulsed drain current: 900A
Power dissipation: 146W
Gate charge: 79nC
Polarisation: unipolar
Drain current: 165A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 165A; Idm: 900A; 146W; TDFNW8
Kind of package: reel; tape
Case: TDFNW8
On-state resistance: 4.45mΩ
Mounting: SMD
Pulsed drain current: 900A
Power dissipation: 146W
Gate charge: 79nC
Polarisation: unipolar
Drain current: 165A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH