Produkte > ONSEMI > NVMTSC4D3N15MC

NVMTSC4D3N15MC onsemi

nvmtsc4d3n15mc-d.pdf
Hersteller: onsemi
MOSFETs PTNG 150V IN CEBU DFNW 8X8 DUAL COOL FOR AUTOMOTIVE
auf Bestellung 12000 Stücke:
Lieferzeit 375-379 Tag (e)
AnzahlPrivatkunde
1+14.09 EUR
10+8.63 EUR
100+8.13 EUR
1000+6.51 EUR
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details NVMTSC4D3N15MC onsemi

Description: PTNG 150V IN CEBU DFNW 8X8 DUAL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 165A (Tc), Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V, Power Dissipation (Max): 5W (Ta), 292W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 521µA, Supplier Device Package: 8-TDFNW (8.3x8.4), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote NVMTSC4D3N15MC

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
NVMTSC4D3N15MC NVMTSC4D3N15MC onsemi nvmtsc4d3n15mc-d.pdf Description: PTNG 150V IN CEBU DFNW 8X8 DUAL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 165A (Tc)
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V
Power Dissipation (Max): 5W (Ta), 292W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 521µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVMTSC4D3N15MC NVMTSC4D3N15MC onsemi nvmtsc4d3n15mc-d.pdf Description: PTNG 150V IN CEBU DFNW 8X8 DUAL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 165A (Tc)
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V
Power Dissipation (Max): 5W (Ta), 292W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 521µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMTSC4D3N15MC ONSEMI nvmtsc4d3n15mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 165A; Idm: 900A; 146W; TDFNW8
Kind of package: reel; tape
Case: TDFNW8
On-state resistance: 4.45mΩ
Mounting: SMD
Pulsed drain current: 900A
Power dissipation: 146W
Gate charge: 79nC
Polarisation: unipolar
Drain current: 165A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMTSC4D3N15MC nvmtsc4d3n15mc-d.pdf
NVMTSC4D3N15MC
Hersteller: onsemi
Description: PTNG 150V IN CEBU DFNW 8X8 DUAL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 165A (Tc)
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V
Power Dissipation (Max): 5W (Ta), 292W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 521µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVMTSC4D3N15MC nvmtsc4d3n15mc-d.pdf
NVMTSC4D3N15MC
Hersteller: onsemi
Description: PTNG 150V IN CEBU DFNW 8X8 DUAL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 165A (Tc)
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V
Power Dissipation (Max): 5W (Ta), 292W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 521µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMTSC4D3N15MC nvmtsc4d3n15mc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 165A; Idm: 900A; 146W; TDFNW8
Kind of package: reel; tape
Case: TDFNW8
On-state resistance: 4.45mΩ
Mounting: SMD
Pulsed drain current: 900A
Power dissipation: 146W
Gate charge: 79nC
Polarisation: unipolar
Drain current: 165A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH