Produkte > ONSEMI > NVMYS003N08LHTWG
NVMYS003N08LHTWG

NVMYS003N08LHTWG onsemi


nvmys003n08lh-d.pdf Hersteller: onsemi
Description: T8 80V LL LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 132A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 137W (Tc)
Vgs(th) (Max) @ Id: 2V @ 183µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3735 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.52 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details NVMYS003N08LHTWG onsemi

Description: T8 80V LL LFPAK, Packaging: Tape & Reel (TR), Package / Case: SOT-1023, 4-LFPAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 132A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V, Power Dissipation (Max): 3.8W (Ta), 137W (Tc), Vgs(th) (Max) @ Id: 2V @ 183µA, Supplier Device Package: LFPAK4 (5x6), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3735 pF @ 40 V, Qualification: AEC-Q101.

Weitere Produktangebote NVMYS003N08LHTWG nach Preis ab 1.62 EUR bis 4.45 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
NVMYS003N08LHTWG NVMYS003N08LHTWG Hersteller : onsemi nvmys003n08lh-d.pdf Description: T8 80V LL LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 132A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 137W (Tc)
Vgs(th) (Max) @ Id: 2V @ 183µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3735 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 14610 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.45 EUR
10+2.97 EUR
100+2.1 EUR
500+1.75 EUR
1000+1.62 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
NVMYS003N08LHTWG Hersteller : ONSEMI nvmys003n08lh-d.pdf NVMYS003N08LHTWG SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMYS003N08LHTWG Hersteller : ON Semiconductor nvmys003n08lh-d.pdf N-Channel MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMYS003N08LHTWG NVMYS003N08LHTWG Hersteller : onsemi NVMYS003N08LH_D-2037503.pdf MOSFET T8 80V LL LFPAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH