NVMYS006N08LHTWG onsemi
Hersteller: onsemi
Description: T8 80V LL LFPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 2V @ 95µA
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 77A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.03 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NVMYS006N08LHTWG onsemi
Description: T8 80V LL LFPAK, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: LFPAK4 (5x6), Vgs(th) (Max) @ Id: 2V @ 95µA, Power Dissipation (Max): 3.7W (Ta), 89W (Tc), Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 77A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-1023, 4-LFPAK, Packaging: Tape & Reel (TR).
Weitere Produktangebote NVMYS006N08LHTWG nach Preis ab 1.11 EUR bis 2.96 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NVMYS006N08LHTWG | onsemi |
MOSFET MOSFET - Power, Single N-Channel, 80 V, 6.2 mohm, 77 A |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
NVMYS006N08LHTWG | onsemi |
Description: T8 80V LL LFPAK Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 77A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V Power Dissipation (Max): 3.7W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 95µA Supplier Device Package: LFPAK4 (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 5960 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NVMYS006N08LHTWG |
|
Hersteller: onsemi
MOSFET MOSFET - Power, Single N-Channel, 80 V, 6.2 mohm, 77 A
MOSFET MOSFET - Power, Single N-Channel, 80 V, 6.2 mohm, 77 A
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 2.78 EUR |
| 10+ | 2.48 EUR |
| 100+ | 1.95 EUR |
| 500+ | 1.6 EUR |
| 1000+ | 1.26 EUR |
| 3000+ | 1.18 EUR |
| NVMYS006N08LHTWG |
|
Hersteller: onsemi
Description: T8 80V LL LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 95µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
Qualification: AEC-Q101
Description: T8 80V LL LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 95µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 5960 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 2.96 EUR |
| 10+ | 2.02 EUR |
| 100+ | 1.42 EUR |
| 500+ | 1.21 EUR |
| 1000+ | 1.11 EUR |