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NVMYS012N10MCLTWG

NVMYS012N10MCLTWG onsemi

nvmys012n10mcl-d.pdf Hersteller: onsemi
Description: PTNG 100V LL LFPAK4
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 14A, 10V
Power Dissipation (Max): 3.6W (Ta), 72W (Tc)
Vgs(th) (Max) @ Id: 3V @ 77µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1338 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.93 EUR
6000+0.9 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NVMYS012N10MCLTWG onsemi

Description: PTNG 100V LL LFPAK4, Packaging: Tape & Reel (TR), Package / Case: SOT-1023, 4-LFPAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 52A (Tc), Rds On (Max) @ Id, Vgs: 12.2mOhm @ 14A, 10V, Power Dissipation (Max): 3.6W (Ta), 72W (Tc), Vgs(th) (Max) @ Id: 3V @ 77µA, Supplier Device Package: LFPAK4 (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1338 pF @ 50 V, Grade: Automotive, Qualification: AEC-Q101.

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NVMYS012N10MCLTWG NVMYS012N10MCLTWG Hersteller : onsemi NVMYS012N10MCL_D-3150541.pdf MOSFETs PTNG 100V LL LFPAK4
auf Bestellung 4260 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.41 EUR
10+1.99 EUR
100+1.53 EUR
500+1.3 EUR
1000+1.11 EUR
3000+0.94 EUR
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NVMYS012N10MCLTWG NVMYS012N10MCLTWG Hersteller : onsemi nvmys012n10mcl-d.pdf Description: PTNG 100V LL LFPAK4
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 14A, 10V
Power Dissipation (Max): 3.6W (Ta), 72W (Tc)
Vgs(th) (Max) @ Id: 3V @ 77µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1338 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 8017 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.54 EUR
10+2.21 EUR
25+1.86 EUR
100+1.47 EUR
250+1.27 EUR
500+1.16 EUR
1000+1.06 EUR
Mindestbestellmenge: 5
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NVMYS012N10MCLTWG Hersteller : ON Semiconductor nvmys012n10mcl-d.pdf NVMYS012N10MCLTWG
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NVMYS012N10MCLTWG Hersteller : ONSEMI nvmys012n10mcl-d.pdf NVMYS012N10MCLTWG SMD N channel transistors
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