NVMYS013N08LHTWG onsemi

Description: T8 80V LL LFPAK, Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: LFPAK4 (5x6), Vgs(th) (Max) @ Id: 2V @ 45µA, Power Dissipation (Max): 3.6W (Ta), 54W (Tc), Qualification: AEC-Q101, Grade: Automotive, Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-1023, 4-LFPAK, Packaging: Tape & Reel (TR).