NVMYS016N06CTWG onsemi
Hersteller: onsemi
Description: POWER MOSFET 60 V, 16M33A, SINGL
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 4V @ 25µA
Power Dissipation (Max): 3.8W (Ta), 35.7W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Bulk
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Technische Details NVMYS016N06CTWG onsemi
Description: POWER MOSFET 60 V, 16M33A, SINGL, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: LFPAK4 (5x6), Vgs(th) (Max) @ Id: 4V @ 25µA, Power Dissipation (Max): 3.8W (Ta), 35.7W (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 33A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-1023, 4-LFPAK, Packaging: Bulk.