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NVMYS016N10MCLTWG

NVMYS016N10MCLTWG onsemi

nvmys016n10mcl-d.pdf Hersteller: onsemi
Description: PTNG 100V LL LFPAK4
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 10V
Power Dissipation (Max): 3.6W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 3V @ 64µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.86 EUR
6000+0.83 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NVMYS016N10MCLTWG onsemi

Description: PTNG 100V LL LFPAK4, Packaging: Tape & Reel (TR), Package / Case: SOT-1023, 4-LFPAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 46A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 10V, Power Dissipation (Max): 3.6W (Ta), 64W (Tc), Vgs(th) (Max) @ Id: 3V @ 64µA, Supplier Device Package: LFPAK4 (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V, Grade: Automotive, Qualification: AEC-Q101.

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NVMYS016N10MCLTWG NVMYS016N10MCLTWG Hersteller : onsemi nvmys016n10mcl-d.pdf Description: PTNG 100V LL LFPAK4
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 10V
Power Dissipation (Max): 3.6W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 3V @ 64µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 25572 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.29 EUR
10+2.05 EUR
25+1.73 EUR
100+1.36 EUR
250+1.18 EUR
500+1.07 EUR
1000+0.98 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
NVMYS016N10MCLTWG Hersteller : ON Semiconductor nvmys016n10mcl-d.pdf NVMYS016N10MCLTWG
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NVMYS016N10MCLTWG Hersteller : ONSEMI nvmys016n10mcl-d.pdf NVMYS016N10MCLTWG SMD N channel transistors
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NVMYS016N10MCLTWG NVMYS016N10MCLTWG Hersteller : onsemi nvmys016n10mcl-d.pdf MOSFETs MOSFET - Power, Single N-Channel 100 V, 14 mohm, 46 A
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