NVMYS020N08LHTWG onsemi
Hersteller: onsemiDescription: T8 80V LL LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 623 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.59 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NVMYS020N08LHTWG onsemi
Description: T8 80V LL LFPAK, Packaging: Tape & Reel (TR), Package / Case: SOT-1023, 4-LFPAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc), Rds On (Max) @ Id, Vgs: 19.5mOhm @ 5A, 10V, Power Dissipation (Max): 3.5W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 2V @ 30µA, Supplier Device Package: LFPAK4 (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 623 pF @ 40 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVMYS020N08LHTWG nach Preis ab 0.66 EUR bis 1.92 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
NVMYS020N08LHTWG | Hersteller : onsemi |
Description: T8 80V LL LFPAK Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 5A, 10V Power Dissipation (Max): 3.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2V @ 30µA Supplier Device Package: LFPAK4 (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 623 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 18499 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
| NVMYS020N08LHTWG | Hersteller : ON Semiconductor |
Power MOSFET, Single N-Channel |
Produkt ist nicht verfügbar |
||||||||||||||
| NVMYS020N08LHTWG | Hersteller : ONSEMI |
NVMYS020N08LHTWG SMD N channel transistors |
Produkt ist nicht verfügbar |
||||||||||||||
 |
NVMYS020N08LHTWG | Hersteller : onsemi |
MOSFETs T8 80V LL LFPAK |
Produkt ist nicht verfügbar |