NVMYS1D2N04CLTWG onsemi
Hersteller: onsemi
Description: MOSFET N-CH 40V 44A/258A LFPAK4
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 258A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6330 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 2V @ 180µA
Power Dissipation (Max): 3.9W (Ta), 134W (Tc)
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Technische Details NVMYS1D2N04CLTWG onsemi
Description: MOSFET N-CH 40V 44A/258A LFPAK4, Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 258A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-1023, 4-LFPAK, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 6330 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: LFPAK4 (5x6), Vgs(th) (Max) @ Id: 2V @ 180µA, Power Dissipation (Max): 3.9W (Ta), 134W (Tc).
Weitere Produktangebote NVMYS1D2N04CLTWG nach Preis ab 1.66 EUR bis 4.49 EUR
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NVMYS1D2N04CLTWG | onsemi |
Description: MOSFET N-CH 40V 44A/258A LFPAK4 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 6330 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: LFPAK4 (5x6) Vgs(th) (Max) @ Id: 2V @ 180µA Power Dissipation (Max): 3.9W (Ta), 134W (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 258A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1023, 4-LFPAK Packaging: Cut Tape (CT) |
auf Bestellung 8990 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMYS1D2N04CLTWG |
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Hersteller: onsemi
Description: MOSFET N-CH 40V 44A/258A LFPAK4
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6330 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 2V @ 180µA
Power Dissipation (Max): 3.9W (Ta), 134W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 258A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 44A/258A LFPAK4
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6330 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 2V @ 180µA
Power Dissipation (Max): 3.9W (Ta), 134W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 258A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Cut Tape (CT)
auf Bestellung 8990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.49 EUR |
| 10+ | 2.9 EUR |
| 100+ | 2 EUR |
| 500+ | 1.66 EUR |