Produkte > ONSEMI > NVMYS1D7N04CT1G
NVMYS1D7N04CT1G

NVMYS1D7N04CT1G onsemi

nvmys1d7n04c-d.pdf Hersteller: onsemi
Description: T6 40V SL AIZU SINGLE NCH LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36.6A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 107.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 210µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3125 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.20 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details NVMYS1D7N04CT1G onsemi

Description: T6 40V SL AIZU SINGLE NCH LFPAK, Packaging: Tape & Reel (TR), Package / Case: SOT-1023, 4-LFPAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36.6A (Ta), 190A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V, Power Dissipation (Max): 3.9W (Ta), 107.1W (Tc), Vgs(th) (Max) @ Id: 4V @ 210µA, Supplier Device Package: LFPAK4 (5x6), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3125 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote NVMYS1D7N04CT1G nach Preis ab 1.33 EUR bis 4.10 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
NVMYS1D7N04CT1G NVMYS1D7N04CT1G Hersteller : onsemi nvmys1d7n04c-d.pdf Description: T6 40V SL AIZU SINGLE NCH LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36.6A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 107.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 210µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3125 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.10 EUR
10+2.63 EUR
100+1.80 EUR
500+1.44 EUR
1000+1.33 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
NVMYS1D7N04CT1G Hersteller : ONSEMI nvmys1d7n04c-d.pdf NVMYS1D7N04CT1G SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMYS1D7N04CT1G Hersteller : ON Semiconductor nvmys1d7n04c-d.pdf Power MOSFET 40V, 1.7 m, 190 A, Single N Channel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH