NVMYS2D2N06CLTWG onsemi
Hersteller: onsemiDescription: MOSFET N-CH 60V 31A/185A LFPAK4
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 134W (Tc)
Vgs(th) (Max) @ Id: 2V @ 180µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2986 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.54 EUR |
| 10+ | 2.94 EUR |
| 100+ | 2.34 EUR |
| 500+ | 1.98 EUR |
| 1000+ | 1.68 EUR |
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Technische Details NVMYS2D2N06CLTWG onsemi
Description: MOSFET N-CH 60V 31A/185A LFPAK4, Packaging: Tape & Reel (TR), Package / Case: SOT-1023, 4-LFPAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 185A (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V, Power Dissipation (Max): 3.9W (Ta), 134W (Tc), Vgs(th) (Max) @ Id: 2V @ 180µA, Supplier Device Package: LFPAK4 (5x6), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote NVMYS2D2N06CLTWG nach Preis ab 1.42 EUR bis 4.03 EUR
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NVMYS2D2N06CLTWG | Hersteller : onsemi |
MOSFETs TRENCH 6 40V SL NFET |
auf Bestellung 2900 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMYS2D2N06CLTWG | Hersteller : ON Semiconductor |
Power MOSFET |
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| NVMYS2D2N06CLTWG | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 185A; Idm: 900A; 67W; LFPAK56 Case: LFPAK56 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 69nC On-state resistance: 2mΩ Power dissipation: 67W Drain current: 185A Pulsed drain current: 900A Gate-source voltage: ±20V Drain-source voltage: 60V Anzahl je Verpackung: 1 Stücke |
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NVMYS2D2N06CLTWG | Hersteller : onsemi |
Description: MOSFET N-CH 60V 31A/185A LFPAK4 Packaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 185A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 134W (Tc) Vgs(th) (Max) @ Id: 2V @ 180µA Supplier Device Package: LFPAK4 (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| NVMYS2D2N06CLTWG | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 185A; Idm: 900A; 67W; LFPAK56 Case: LFPAK56 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 69nC On-state resistance: 2mΩ Power dissipation: 67W Drain current: 185A Pulsed drain current: 900A Gate-source voltage: ±20V Drain-source voltage: 60V |
Produkt ist nicht verfügbar |