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NVMYS2D4N04CTWG

NVMYS2D4N04CTWG onsemi

nvmys2d4n04c-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 40V 30A/138A LFPAK4
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 138A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.53 EUR
10+ 2.07 EUR
100+ 1.61 EUR
500+ 1.37 EUR
1000+ 1.11 EUR
Mindestbestellmenge: 7
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Technische Details NVMYS2D4N04CTWG onsemi

Description: MOSFET N-CH 40V 30A/138A LFPAK4, Packaging: Tape & Reel (TR), Package / Case: SOT-1023, 4-LFPAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 138A (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V, Power Dissipation (Max): 3.9W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 90µA, Supplier Device Package: LFPAK4 (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

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NVMYS2D4N04CTWG NVMYS2D4N04CTWG Hersteller : onsemi NVMYS2D4N04C_D-2319618.pdf MOSFET Power Mosfet 40V 2.4ohm 130A
auf Bestellung 3000 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
14+3.72 EUR
18+ 3.04 EUR
100+ 2.37 EUR
500+ 2 EUR
1000+ 1.63 EUR
3000+ 1.54 EUR
6000+ 1.46 EUR
Mindestbestellmenge: 14
NVMYS2D4N04CTWG Hersteller : ON Semiconductor nvmys2d4n04c-d.pdf
auf Bestellung 2386 Stücke:
Lieferzeit 21-28 Tag (e)
NVMYS2D4N04CTWG NVMYS2D4N04CTWG Hersteller : ON Semiconductor nvmys2d4n04c-d.pdf Power MOSFET
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NVMYS2D4N04CTWG NVMYS2D4N04CTWG Hersteller : onsemi nvmys2d4n04c-d.pdf Description: MOSFET N-CH 40V 30A/138A LFPAK4
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 138A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar