NVMYS2D4N04CTWG onsemi
Hersteller: onsemiDescription: MOSFET N-CH 40V 30A/138A LFPAK4
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 138A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2060 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.57 EUR |
| 10+ | 1.97 EUR |
| 100+ | 1.38 EUR |
| 500+ | 1.1 EUR |
| 1000+ | 1.05 EUR |
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Technische Details NVMYS2D4N04CTWG onsemi
Description: MOSFET N-CH 40V 30A/138A LFPAK4, Packaging: Tape & Reel (TR), Package / Case: SOT-1023, 4-LFPAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 138A (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V, Power Dissipation (Max): 3.9W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 90µA, Supplier Device Package: LFPAK4 (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVMYS2D4N04CTWG nach Preis ab 0.91 EUR bis 2.59 EUR
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NVMYS2D4N04CTWG | Hersteller : onsemi |
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| NVMYS2D4N04CTWG | Hersteller : ON Semiconductor |
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NVMYS2D4N04CTWG | Hersteller : ON Semiconductor |
Power MOSFET |
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| NVMYS2D4N04CTWG | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 138A; Idm: 829A; 27W; LFPAK56 Gate charge: 32nC On-state resistance: 2.3mΩ Power dissipation: 27W Gate-source voltage: ±20V Drain current: 138A Drain-source voltage: 40V Pulsed drain current: 829A Case: LFPAK56 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
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NVMYS2D4N04CTWG | Hersteller : onsemi |
Description: MOSFET N-CH 40V 30A/138A LFPAK4 Packaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 138A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 90µA Supplier Device Package: LFPAK4 (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| NVMYS2D4N04CTWG | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 138A; Idm: 829A; 27W; LFPAK56 Gate charge: 32nC On-state resistance: 2.3mΩ Power dissipation: 27W Gate-source voltage: ±20V Drain current: 138A Drain-source voltage: 40V Pulsed drain current: 829A Case: LFPAK56 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar |
Produkt ist nicht verfügbar |