NVMYS2D4N04CTWG onsemi

Description: MOSFET N-CH 40V 30A/138A LFPAK4, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: LFPAK4 (5x6), Vgs(th) (Max) @ Id: 3.5V @ 90µA, Power Dissipation (Max): 3.9W (Ta), 83W (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 138A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-1023, 4-LFPAK, Packaging: Tape & Reel (TR).