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NVMYS2D9N04CLTWG

NVMYS2D9N04CLTWG onsemi

nvmys2d9n04cl-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 40V 27A/110A LFPAK4
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
Power Dissipation (Max): 3.7W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 60µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.83 EUR
6000+0.81 EUR
Mindestbestellmenge: 3000
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Technische Details NVMYS2D9N04CLTWG onsemi

Description: MOSFET N-CH 40V 27A/110A LFPAK4, Packaging: Tape & Reel (TR), Package / Case: SOT-1023, 4-LFPAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 110A (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V, Power Dissipation (Max): 3.7W (Ta), 68W (Tc), Vgs(th) (Max) @ Id: 2V @ 60µA, Supplier Device Package: LFPAK4 (5x6), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V, Qualification: AEC-Q101.

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NVMYS2D9N04CLTWG NVMYS2D9N04CLTWG Hersteller : onsemi NVMYS2D9N04CL_D-2319820.pdf MOSFET TRENCH 6 40V SL NFET
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NVMYS2D9N04CLTWG NVMYS2D9N04CLTWG Hersteller : onsemi nvmys2d9n04cl-d.pdf Description: MOSFET N-CH 40V 27A/110A LFPAK4
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
Power Dissipation (Max): 3.7W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 60µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 8770 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.06 EUR
10+1.95 EUR
100+1.31 EUR
500+1.04 EUR
1000+0.95 EUR
Mindestbestellmenge: 6
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NVMYS2D9N04CLTWG Hersteller : ON Semiconductor nvmys2d9n04cl-d.pdf
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NVMYS2D9N04CLTWG Hersteller : ONSEMI nvmys2d9n04cl-d.pdf NVMYS2D9N04CLTWG SMD N channel transistors
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