NVMYS2D9N04CLTWG onsemi
Hersteller: onsemi
Description: MOSFET N-CH 40V 27A/110A LFPAK4
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
Power Dissipation (Max): 3.7W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 60µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
Qualification: AEC-Q101
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Technische Details NVMYS2D9N04CLTWG onsemi
Description: MOSFET N-CH 40V 27A/110A LFPAK4, Packaging: Tape & Reel (TR), Package / Case: SOT-1023, 4-LFPAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 110A (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V, Power Dissipation (Max): 3.7W (Ta), 68W (Tc), Vgs(th) (Max) @ Id: 2V @ 60µA, Supplier Device Package: LFPAK4 (5x6), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote NVMYS2D9N04CLTWG nach Preis ab 0.99 EUR bis 3.64 EUR
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NVMYS2D9N04CLTWG | onsemi |
MOSFETs TRENCH 6 40V SL NFET |
auf Bestellung 2515 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMYS2D9N04CLTWG | onsemi |
Description: MOSFET N-CH 40V 27A/110A LFPAK4 Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 110A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V Power Dissipation (Max): 3.7W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 2V @ 60µA Supplier Device Package: LFPAK4 (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 8770 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMYS2D9N04CLTWG | ON Semiconductor |
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auf Bestellung 258000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NVMYS2D9N04CLTWG |
|
Hersteller: onsemi
MOSFETs TRENCH 6 40V SL NFET
MOSFETs TRENCH 6 40V SL NFET
auf Bestellung 2515 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.39 EUR |
| 10+ | 2.15 EUR |
| 100+ | 1.45 EUR |
| 500+ | 1.14 EUR |
| 1000+ | 1.06 EUR |
| 3000+ | 0.99 EUR |
| NVMYS2D9N04CLTWG |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 27A/110A LFPAK4
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
Power Dissipation (Max): 3.7W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 60µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 27A/110A LFPAK4
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
Power Dissipation (Max): 3.7W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 60µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 8770 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.64 EUR |
| 10+ | 2.32 EUR |
| 100+ | 1.56 EUR |
| 500+ | 1.24 EUR |
| 1000+ | 1.13 EUR |
| NVMYS2D9N04CLTWG |
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Hersteller: ON Semiconductor
auf Bestellung 258000 Stücke:
Lieferzeit 21-28 Tag (e)