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NVMYS3D3N06CLTWG onsemi


nvmys3d3n06cl-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 60V 26A/133A 4LFPAK
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc)
FET Type: N-Channel
Packaging: Tape & Reel (TR)
Grade: Automotive
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 15000 Stücke:

Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+1.09 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NVMYS3D3N06CLTWG onsemi

Description: MOSFET N-CH 60V 26A/133A 4LFPAK, Mounting Type: Surface Mount, Package / Case: SOT-1023, 4-LFPAK, Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc), FET Type: N-Channel, Packaging: Tape & Reel (TR), Grade: Automotive, Supplier Device Package: LFPAK4 (5x6), Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 3.9W (Ta), 100W (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V.

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NVMYS3D3N06CLTWG NVMYS3D3N06CLTWG onsemi nvmys3d3n06cl-d.pdf Description: MOSFET N-CH 60V 26A/133A 4LFPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Cut Tape (CT)
auf Bestellung 17675 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.8 EUR
10+2.44 EUR
100+1.66 EUR
500+1.33 EUR
1000+1.22 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVMYS3D3N06CLTWG nvmys3d3n06cl-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 60V 26A/133A 4LFPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Cut Tape (CT)
auf Bestellung 17675 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+3.8 EUR
10+2.44 EUR
100+1.66 EUR
500+1.33 EUR
1000+1.22 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH