NVMYS3D3N06CLTWG onsemi
Hersteller: onsemi
Description: MOSFET N-CH 60V 26A/133A 4LFPAK
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc)
FET Type: N-Channel
Packaging: Tape & Reel (TR)
Grade: Automotive
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Technische Details NVMYS3D3N06CLTWG onsemi
Description: MOSFET N-CH 60V 26A/133A 4LFPAK, Mounting Type: Surface Mount, Package / Case: SOT-1023, 4-LFPAK, Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc), FET Type: N-Channel, Packaging: Tape & Reel (TR), Grade: Automotive, Supplier Device Package: LFPAK4 (5x6), Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 3.9W (Ta), 100W (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V.
Weitere Produktangebote NVMYS3D3N06CLTWG nach Preis ab 1.22 EUR bis 3.8 EUR
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NVMYS3D3N06CLTWG | onsemi |
Description: MOSFET N-CH 60V 26A/133A 4LFPAKQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: LFPAK4 (5x6) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.9W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1023, 4-LFPAK Packaging: Cut Tape (CT) |
auf Bestellung 17675 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMYS3D3N06CLTWG |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 26A/133A 4LFPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 26A/133A 4LFPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Cut Tape (CT)
auf Bestellung 17675 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.8 EUR |
| 10+ | 2.44 EUR |
| 100+ | 1.66 EUR |
| 500+ | 1.33 EUR |
| 1000+ | 1.22 EUR |

