NVMYS3D5N04CTWG onsemi
Hersteller: onsemiDescription: MOSFET N-CH 40V 24A/102A LFPAK4
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 102A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2954 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.36 EUR |
| 12+ | 1.6 EUR |
| 100+ | 1.12 EUR |
| 500+ | 0.91 EUR |
| 1000+ | 0.84 EUR |
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Technische Details NVMYS3D5N04CTWG onsemi
Description: MOSFET N-CH 40V 24A/102A LFPAK4, Packaging: Tape & Reel (TR), Package / Case: SOT-1023, 4-LFPAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 102A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V, Power Dissipation (Max): 3.6W (Ta), 68W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 60µA, Supplier Device Package: LFPAK4 (5x6), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote NVMYS3D5N04CTWG nach Preis ab 0.76 EUR bis 2.59 EUR
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NVMYS3D5N04CTWG | Hersteller : onsemi |
MOSFETs TRENCH 6 40V SL NFET |
auf Bestellung 2900 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMYS3D5N04CTWG | Hersteller : ON Semiconductor |
Power MOSFET |
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| NVMYS3D5N04CTWG | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 102A; Idm: 554A; 34W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 102A Pulsed drain current: 554A Power dissipation: 34W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
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NVMYS3D5N04CTWG | Hersteller : onsemi |
Description: MOSFET N-CH 40V 24A/102A LFPAK4 Packaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 102A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: LFPAK4 (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| NVMYS3D5N04CTWG | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 102A; Idm: 554A; 34W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 102A Pulsed drain current: 554A Power dissipation: 34W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |