| Anzahl | Preis |
|---|---|
| 2+ | 1.74 EUR |
| 10+ | 1.42 EUR |
| 100+ | 1.12 EUR |
| 500+ | 1.01 EUR |
| 1000+ | 0.85 EUR |
| 3000+ | 0.81 EUR |
| 6000+ | 0.77 EUR |
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Technische Details NVMYS4D6N04CLTWG onsemi
Description: MOSFET N-CH 40V 21A/78A LFPAK4, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: LFPAK4 (5x6), Vgs(th) (Max) @ Id: 2V @ 40µA, Power Dissipation (Max): 3.6W (Ta), 50W (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-1023, 4-LFPAK, Packaging: Tape & Reel (TR).
Weitere Produktangebote NVMYS4D6N04CLTWG nach Preis ab 0.75 EUR bis 2.16 EUR
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NVMYS4D6N04CLTWG | onsemi |
 Description: MOSFET N-CH 40V 21A/78A LFPAK4Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: LFPAK4 (5x6) Vgs(th) (Max) @ Id: 2V @ 40µA Power Dissipation (Max): 3.6W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1023, 4-LFPAK Packaging: Cut Tape (CT) |
auf Bestellung 2939 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMYS4D6N04CLTWG | ON Semiconductor |
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auf Bestellung 2770 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NVMYS4D6N04CLTWG |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 21A/78A LFPAK4
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 2V @ 40µA
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 21A/78A LFPAK4
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 2V @ 40µA
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Cut Tape (CT)
auf Bestellung 2939 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 2.16 EUR |
| 13+ | 1.41 EUR |
| 100+ | 0.98 EUR |
| 500+ | 0.82 EUR |
| 1000+ | 0.75 EUR |
| NVMYS4D6N04CLTWG |
|
Hersteller: ON Semiconductor
auf Bestellung 2770 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH