NVMYS7D3N04CLTWG onsemi
Hersteller: onsemiDescription: MOSFET N-CH 40V 17A/52A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.62 EUR |
| 6000+ | 0.59 EUR |
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Technische Details NVMYS7D3N04CLTWG onsemi
Description: MOSFET N-CH 40V 17A/52A 4LFPAK, Packaging: Tape & Reel (TR), Package / Case: SOT-1023, 4-LFPAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 52A (Tc), Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V, Power Dissipation (Max): 3.8W (Ta), 38W (Tc), Vgs(th) (Max) @ Id: 2V @ 30µA, Supplier Device Package: LFPAK4 (5x6), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote NVMYS7D3N04CLTWG nach Preis ab 0.66 EUR bis 2.99 EUR
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NVMYS7D3N04CLTWG | Hersteller : onsemi |
Description: MOSFET N-CH 40V 17A/52A 4LFPAK Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 52A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V Power Dissipation (Max): 3.8W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 2V @ 30µA Supplier Device Package: LFPAK4 (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 8803 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMYS7D3N04CLTWG | Hersteller : onsemi |
MOSFET 40V 7.3Ohm 50A Single N-Channel |
auf Bestellung 455 Stücke: Lieferzeit 10-14 Tag (e) |
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