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NVT2023N065M3S

NVT2023N065M3S onsemi


nvt2023n065m3s-d.pdf Hersteller: onsemi
SiC MOSFETs T2PAK SIC 650V M3S 23MR
auf Bestellung 634 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+13.73 EUR
10+9.91 EUR
100+8.69 EUR
500+8.57 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NVT2023N065M3S onsemi

Description: ELITESIC, 23 MOHM, 650 V, M3S,T2, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), Variant, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 72A (Tc), Rds On (Max) @ Id, Vgs: 32.6mOhm @ 21A, 18V, Power Dissipation (Max): 288W (Tc), Vgs(th) (Max) @ Id: 4V @ 10mA, Supplier Device Package: T2PAK, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V.

Weitere Produktangebote NVT2023N065M3S nach Preis ab 7.97 EUR bis 13.48 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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NVT2023N065M3S Hersteller : onsemi nvt2023n065m3s-d.pdf Description: ELITESIC, 23 MOHM, 650 V, M3S,T2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 32.6mOhm @ 21A, 18V
Power Dissipation (Max): 288W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: T2PAK
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+8.14 EUR
1600+7.97 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
NVT2023N065M3S Hersteller : onsemi nvt2023n065m3s-d.pdf Description: ELITESIC, 23 MOHM, 650 V, M3S,T2
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 32.6mOhm @ 21A, 18V
Power Dissipation (Max): 288W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: T2PAK
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V
auf Bestellung 3935 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.48 EUR
10+10.48 EUR
25+9.73 EUR
100+8.91 EUR
250+8.51 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH