NVTFS005N04CTAG onsemi
Hersteller: onsemiDescription: MOSFET N-CH 40V 17A/69A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 69A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 35A, 10V
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1500+ | 0.98 EUR |
| 3000+ | 0.94 EUR |
| 4500+ | 0.92 EUR |
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Technische Details NVTFS005N04CTAG onsemi
Description: MOSFET N-CH 40V 17A/69A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 69A (Tc), Rds On (Max) @ Id, Vgs: 5.6mOhm @ 35A, 10V, Power Dissipation (Max): 3.1W (Ta), 50W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 40µA, Supplier Device Package: 8-WDFN (3.3x3.3), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote NVTFS005N04CTAG nach Preis ab 0.89 EUR bis 3.04 EUR
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NVTFS005N04CTAG | Hersteller : onsemi |
MOSFETs T6 40V SG NCH U8FL |
auf Bestellung 890 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS005N04CTAG | Hersteller : onsemi |
Description: MOSFET N-CH 40V 17A/69A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 69A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 35A, 10V Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 9123 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS005N04CTAG | Hersteller : ON Semiconductor |
Single N-Channel Power MOSFET |
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| NVTFS005N04CTAG | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 69A; Idm: 297A; 16W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 69A Pulsed drain current: 297A Power dissipation: 16W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 5.6mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NVTFS005N04CTAG | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 69A; Idm: 297A; 16W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 69A Pulsed drain current: 297A Power dissipation: 16W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 5.6mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |