NVTFS008N04CTAG onsemi
Hersteller: onsemiDescription: MOSFET N-CH 40V 14A/48A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 72000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1500+ | 0.91 EUR |
| 3000+ | 0.86 EUR |
| 7500+ | 0.81 EUR |
| 10500+ | 0.78 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NVTFS008N04CTAG onsemi
Description: MOSFET N-CH 40V 14A/48A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V, Power Dissipation (Max): 3.1W (Ta), 38W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 30µA, Supplier Device Package: 8-WDFN (3.3x3.3), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote NVTFS008N04CTAG nach Preis ab 1.12 EUR bis 2.06 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
NVTFS008N04CTAG | Hersteller : onsemi |
Description: MOSFET N-CH 40V 14A/48A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V Power Dissipation (Max): 3.1W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 30µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 72000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
| NVTFS008N04CTAG | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 193A; 12W; WDFN8 Case: WDFN8 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Gate-source voltage: ±20V Gate charge: 10nC On-state resistance: 8.5mΩ Power dissipation: 12W Drain current: 48A Drain-source voltage: 40V Pulsed drain current: 193A Polarisation: unipolar Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| NVTFS008N04CTAG | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 193A; 12W; WDFN8 Case: WDFN8 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Gate-source voltage: ±20V Gate charge: 10nC On-state resistance: 8.5mΩ Power dissipation: 12W Drain current: 48A Drain-source voltage: 40V Pulsed drain current: 193A Polarisation: unipolar Kind of channel: enhancement |
Produkt ist nicht verfügbar |