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NVTFS010N10MCLTAG

NVTFS010N10MCLTAG onsemi

nvtfs010n10mcl-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 100V 11.7A/57.8 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 57.8 (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 77.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 85µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 9250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1500+1.11 EUR
3000+ 1.04 EUR
7500+ 0.99 EUR
Mindestbestellmenge: 1500
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Technische Details NVTFS010N10MCLTAG onsemi

Description: MOSFET N-CH 100V 11.7A/57.8 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 57.8 (Tc), Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V, Power Dissipation (Max): 3.2W (Ta), 77.8W (Tc), Vgs(th) (Max) @ Id: 3V @ 85µA, Supplier Device Package: 8-WDFN (3.3x3.3), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V, Qualification: AEC-Q101.

Weitere Produktangebote NVTFS010N10MCLTAG nach Preis ab 1.36 EUR bis 3.69 EUR

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NVTFS010N10MCLTAG NVTFS010N10MCLTAG Hersteller : onsemi nvtfs010n10mcl-d.pdf Description: MOSFET N-CH 100V 11.7A/57.8 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 57.8 (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 77.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 85µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 9250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.52 EUR
10+ 2.06 EUR
100+ 1.61 EUR
500+ 1.36 EUR
Mindestbestellmenge: 7
NVTFS010N10MCLTAG NVTFS010N10MCLTAG Hersteller : onsemi NVTFS010N10MCL_D-2319984.pdf MOSFET PTNG 100V LL IN
auf Bestellung 40870 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
15+3.69 EUR
18+ 3.04 EUR
100+ 2.36 EUR
500+ 2 EUR
1000+ 1.79 EUR
1500+ 1.53 EUR
3000+ 1.44 EUR
Mindestbestellmenge: 15
NVTFS010N10MCLTAG NVTFS010N10MCLTAG Hersteller : ON Semiconductor nvtfs010n10mcl-d.pdf Trans MOSFET N-CH 100V 11.7A Automotive 8-Pin WDFN EP T/R
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