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NVTFS016N06CT1G

NVTFS016N06CT1G onsemi


NVTFS016N06C-D.PDF
Hersteller: onsemi
Description: POWER MOSFET, SINGLE, N-CHANNEL,
Qualification: AEC-Q101
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Power Dissipation (Max): 36W
Current - Continuous Drain (Id) @ 25°C: 32A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Bulk
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Technische Details NVTFS016N06CT1G onsemi

Description: POWER MOSFET, SINGLE, N-CHANNEL,, Qualification: AEC-Q101, Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: 8-WDFN (3.3x3.3), Power Dissipation (Max): 36W, Current - Continuous Drain (Id) @ 25°C: 32A, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Bulk.