NVTFS052P04M8LTAG onsemi
auf Bestellung 6262 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.85 EUR |
| 10+ | 1.21 EUR |
| 100+ | 0.8 EUR |
| 500+ | 0.66 EUR |
| 1000+ | 0.57 EUR |
| 1500+ | 0.52 EUR |
| 3000+ | 0.47 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NVTFS052P04M8LTAG onsemi
Description: MOSFET P-CH 40V 4.7A/13.2A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 13.2A (Tc), Rds On (Max) @ Id, Vgs: 69mOhm @ 5A, 10V, Power Dissipation (Max): 2.9W (Ta), 23W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 95µA, Supplier Device Package: 8-WDFN (3.3x3.3), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote NVTFS052P04M8LTAG nach Preis ab 0.8 EUR bis 1.92 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NVTFS052P04M8LTAG | Hersteller : onsemi |
 Description: MOSFET P-CH 40V 4.7A/13.2A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 13.2A (Tc) Rds On (Max) @ Id, Vgs: 69mOhm @ 5A, 10V Power Dissipation (Max): 2.9W (Ta), 23W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 95µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 169 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
| NVTFS052P04M8LTAG | Hersteller : ON Semiconductor |
Power, Single P-Channel, -40 V, -13.2 A |
Produkt ist nicht verfügbar |
||||||||||
| NVTFS052P04M8LTAG | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -13.2A; Idm: -46A; 11.5W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -13.2A Pulsed drain current: -46A Power dissipation: 11.5W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 69mΩ Mounting: SMD Gate charge: 6.3nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||
|
|
NVTFS052P04M8LTAG | Hersteller : onsemi |
Description: MOSFET P-CH 40V 4.7A/13.2A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 13.2A (Tc) Rds On (Max) @ Id, Vgs: 69mOhm @ 5A, 10V Power Dissipation (Max): 2.9W (Ta), 23W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 95µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 20 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|||||||||
| NVTFS052P04M8LTAG | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -13.2A; Idm: -46A; 11.5W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -13.2A Pulsed drain current: -46A Power dissipation: 11.5W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 69mΩ Mounting: SMD Gate charge: 6.3nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |