NVTFS052P04M8LTAG onsemi

Description: MOSFET P-CH 40V 4.7A/13.2A 8WDFN, Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-WDFN (3.3x3.3), Vgs(th) (Max) @ Id: 2.4V @ 95µA, Power Dissipation (Max): 2.9W (Ta), 23W (Tc), Qualification: AEC-Q101, Grade: Automotive, Rds On (Max) @ Id, Vgs: 69mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 13.2A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).