NVTFS052P04M8LTAG onsemi
| Anzahl | Preis |
|---|---|
| 2+ | 1.85 EUR |
| 10+ | 1.21 EUR |
| 100+ | 0.8 EUR |
| 500+ | 0.66 EUR |
| 1000+ | 0.57 EUR |
| 1500+ | 0.52 EUR |
| 3000+ | 0.47 EUR |
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Technische Details NVTFS052P04M8LTAG onsemi
Description: MOSFET P-CH 40V 4.7A/13.2A 8WDFN, Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-WDFN (3.3x3.3), Vgs(th) (Max) @ Id: 2.4V @ 95µA, Power Dissipation (Max): 2.9W (Ta), 23W (Tc), Qualification: AEC-Q101, Grade: Automotive, Rds On (Max) @ Id, Vgs: 69mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 13.2A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote NVTFS052P04M8LTAG nach Preis ab 0.8 EUR bis 1.92 EUR
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NVTFS052P04M8LTAG | onsemi |
 Description: MOSFET P-CH 40V 4.7A/13.2A 8WDFNPower Dissipation (Max): 2.9W (Ta), 23W (Tc) Rds On (Max) @ Id, Vgs: 69mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 13.2A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 2.4V @ 95µA |
auf Bestellung 169 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NVTFS052P04M8LTAG |
|
Hersteller: onsemi
Description: MOSFET P-CH 40V 4.7A/13.2A 8WDFN
Power Dissipation (Max): 2.9W (Ta), 23W (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 13.2A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.4V @ 95µA
Description: MOSFET P-CH 40V 4.7A/13.2A 8WDFN
Power Dissipation (Max): 2.9W (Ta), 23W (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 13.2A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.4V @ 95µA
auf Bestellung 169 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 1.92 EUR |
| 15+ | 1.22 EUR |
| 100+ | 0.8 EUR |