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NVTFS052P04M8LTAG

NVTFS052P04M8LTAG onsemi

nvtfs052p04m8l-d.pdf Hersteller: onsemi
MOSFETs MV8 P INITIAL PROGRAM
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2+1.94 EUR
10+1.33 EUR
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Technische Details NVTFS052P04M8LTAG onsemi

Description: MOSFET P-CH 40V 4.7A/13.2A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 13.2A (Tc), Rds On (Max) @ Id, Vgs: 69mOhm @ 5A, 10V, Power Dissipation (Max): 2.9W (Ta), 23W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 95µA, Supplier Device Package: 8-WDFN (3.3x3.3), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 20 V, Qualification: AEC-Q101.

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NVTFS052P04M8LTAG NVTFS052P04M8LTAG Hersteller : onsemi nvtfs052p04m8l-d.pdf Description: MOSFET P-CH 40V 4.7A/13.2A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 13.2A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 5A, 10V
Power Dissipation (Max): 2.9W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 95µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1269 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.16 EUR
13+1.36 EUR
100+0.90 EUR
500+0.70 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
NVTFS052P04M8LTAG Hersteller : ON Semiconductor nvtfs052p04m8l-d.pdf Power, Single P-Channel, -40 V, -13.2 A
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NVTFS052P04M8LTAG Hersteller : ONSEMI nvtfs052p04m8l-d.pdf NVTFS052P04M8LTAG SMD P channel transistors
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NVTFS052P04M8LTAG NVTFS052P04M8LTAG Hersteller : onsemi nvtfs052p04m8l-d.pdf Description: MOSFET P-CH 40V 4.7A/13.2A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 13.2A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 5A, 10V
Power Dissipation (Max): 2.9W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 95µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH