NVTFS4C02NTAG onsemi
Hersteller: onsemi
Description: MOSFET - SINGLE N-CHANNEL POWER,
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 2.25mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 28.3A (Ta), 162A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produktrezensionen
Produktbewertung abgeben
Technische Details NVTFS4C02NTAG onsemi
Description: MOSFET - SINGLE N-CHANNEL POWER,, Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-WDFN (3.3x3.3), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 3.2W (Ta), 107W (Tc), Rds On (Max) @ Id, Vgs: 2.25mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 28.3A (Ta), 162A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote NVTFS4C02NTAG nach Preis ab 1.43 EUR bis 4.58 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NVTFS4C02NTAG | onsemi |
MOSFETs MOSFET - Single N-Channel Power, N-Channel, u8FL, 30V, 162 A, 2.25 mohm |
auf Bestellung 1009 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
NVTFS4C02NTAG | onsemi |
Description: MOSFET - SINGLE N-CHANNEL POWER, Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 3.2W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 2.25mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 28.3A (Ta), 162A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-WDFN (3.3x3.3) Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 11943 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NVTFS4C02NTAG |
|
Hersteller: onsemi
MOSFETs MOSFET - Single N-Channel Power, N-Channel, u8FL, 30V, 162 A, 2.25 mohm
MOSFETs MOSFET - Single N-Channel Power, N-Channel, u8FL, 30V, 162 A, 2.25 mohm
auf Bestellung 1009 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.87 EUR |
| 10+ | 2.68 EUR |
| 100+ | 1.95 EUR |
| 500+ | 1.68 EUR |
| 1000+ | 1.57 EUR |
| 1500+ | 1.44 EUR |
| 3000+ | 1.43 EUR |
| NVTFS4C02NTAG |
|
Hersteller: onsemi
Description: MOSFET - SINGLE N-CHANNEL POWER,
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 2.25mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 28.3A (Ta), 162A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET - SINGLE N-CHANNEL POWER,
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 2.25mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 28.3A (Ta), 162A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 11943 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.58 EUR |
| 10+ | 2.98 EUR |
| 100+ | 2.06 EUR |
| 500+ | 1.66 EUR |