NVTFS4C06NTAG onsemi
Hersteller: onsemiDescription: MOSFET N-CH 30V 21A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1500+ | 0.92 EUR |
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Technische Details NVTFS4C06NTAG onsemi
Description: MOSFET N-CH 30V 21A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V, Power Dissipation (Max): 3.1W (Ta), 37W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-WDFN (3.3x3.3), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V, Qualification: AEC-Q101.
Weitere Produktangebote NVTFS4C06NTAG nach Preis ab 0.92 EUR bis 2.75 EUR
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NVTFS4C06NTAG | Hersteller : onsemi |
MOSFETs NFET U8FL 30V 71A 4.2MOHM |
auf Bestellung 640 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS4C06NTAG | Hersteller : onsemi |
Description: MOSFET N-CH 30V 21A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V Power Dissipation (Max): 3.1W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 2980 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS4C06NTAG | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 71A Automotive AEC-Q101 8-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |
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| NVTFS4C06NTAG | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 71A; Idm: 367A; 37W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 71A Pulsed drain current: 367A Power dissipation: 37W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NVTFS4C06NTAG | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 71A Automotive 8-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |
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| NVTFS4C06NTAG | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 71A; Idm: 367A; 37W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 71A Pulsed drain current: 367A Power dissipation: 37W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |