NVTFS4C10NWFTAG onsemi
Hersteller: onsemi
Description: MOSFET N-CH 30V 15.3A/47A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 15.3A/47A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1480 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
8+ | 3.48 EUR |
10+ | 2.85 EUR |
100+ | 2.22 EUR |
500+ | 1.88 EUR |
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Technische Details NVTFS4C10NWFTAG onsemi
Description: MOSFET N-CH 30V 15.3A/47A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 47A (Tc), Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V, Power Dissipation (Max): 3W (Ta), 28W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-WDFN (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVTFS4C10NWFTAG nach Preis ab 1.38 EUR bis 3.51 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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NVTFS4C10NWFTAG | Hersteller : onsemi | MOSFET NFET U8FL 30V 47A 7.4MOHM |
auf Bestellung 1101 Stücke: Lieferzeit 14-28 Tag (e) |
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NVTFS4C10NWFTAG | Hersteller : ON Semiconductor | Trans MOSFET N-CH 30V 15.3A Automotive 8-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |
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NVTFS4C10NWFTAG | Hersteller : onsemi |
Description: MOSFET N-CH 30V 15.3A/47A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 47A (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V Power Dissipation (Max): 3W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |