| Anzahl | Preis |
|---|---|
| 2+ | 2.18 EUR |
| 10+ | 1.68 EUR |
| 100+ | 1.28 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 0.98 EUR |
| 1500+ | 0.86 EUR |
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Technische Details NVTFS4C10NWFTAG onsemi
Description: MOSFET N-CH 30V 15.3A/47A 8WDFN, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-WDFN (3.3x3.3), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 3W (Ta), 28W (Tc), Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 47A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote NVTFS4C10NWFTAG nach Preis ab 1.06 EUR bis 2.24 EUR
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NVTFS4C10NWFTAG | onsemi |
 Description: MOSFET N-CH 30V 15.3A/47A 8WDFNQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 3W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 47A (Tc) FET Type: N-Channel |
auf Bestellung 998 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NVTFS4C10NWFTAG |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 15.3A/47A 8WDFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 47A (Tc)
FET Type: N-Channel
Description: MOSFET N-CH 30V 15.3A/47A 8WDFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 47A (Tc)
FET Type: N-Channel
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.24 EUR |
| 11+ | 1.7 EUR |
| 100+ | 1.3 EUR |
| 500+ | 1.06 EUR |