Technische Details NVTFS5116PLWFTAG ON Semiconductor
Description: MOSFET P-CH 60V 6A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 52mOhm @ 7A, 10V, Power Dissipation (Max): 3.2W (Ta), 21W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-WDFN (3.3x3.3), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote NVTFS5116PLWFTAG nach Preis ab 1.09 EUR bis 4.14 EUR
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NVTFS5116PLWFTAG | ONSEMI |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -14A; Idm: -126A; 10W; WDFNW8 On-state resistance: 52mΩ Mounting: SMD Pulsed drain current: -126A Power dissipation: 10W Gate charge: 25nC Polarisation: unipolar Drain current: -14A Kind of channel: enhancement Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: WDFNW8 |
auf Bestellung 1401 Stücke: Lieferzeit 14-21 Tag (e) |
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NVTFS5116PLWFTAG | ON Semiconductor |
Trans MOSFET P-CH 60V 6A Automotive 8-Pin WDFNW EP T/R |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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NVTFS5116PLWFTAG | ON Semiconductor |
Trans MOSFET P-CH 60V 6A Automotive 8-Pin WDFNW EP T/R |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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NVTFS5116PLWFTAG | onsemi |
MOSFETs Pwr MOSFET 60V 14A 52mOhm SGL P-CH |
auf Bestellung 1634 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS5116PLWFTAG | onsemi |
Description: MOSFET P-CH 60V 6A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 7A, 10V Power Dissipation (Max): 3.2W (Ta), 21W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 253 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -14A; Idm: -126A; 10W; WDFNW8
On-state resistance: 52mΩ
Mounting: SMD
Pulsed drain current: -126A
Power dissipation: 10W
Gate charge: 25nC
Polarisation: unipolar
Drain current: -14A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFNW8
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -14A; Idm: -126A; 10W; WDFNW8
On-state resistance: 52mΩ
Mounting: SMD
Pulsed drain current: -126A
Power dissipation: 10W
Gate charge: 25nC
Polarisation: unipolar
Drain current: -14A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFNW8
auf Bestellung 1401 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 69+ | 1.24 EUR |
| 200+ | 1.12 EUR |
| NVTFS5116PLWFTAG |
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Hersteller: ON Semiconductor
Trans MOSFET P-CH 60V 6A Automotive 8-Pin WDFNW EP T/R
Trans MOSFET P-CH 60V 6A Automotive 8-Pin WDFNW EP T/R
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 2.13 EUR |
| NVTFS5116PLWFTAG |
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Hersteller: ON Semiconductor
Trans MOSFET P-CH 60V 6A Automotive 8-Pin WDFNW EP T/R
Trans MOSFET P-CH 60V 6A Automotive 8-Pin WDFNW EP T/R
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 2.13 EUR |
| NVTFS5116PLWFTAG |
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Hersteller: onsemi
MOSFETs Pwr MOSFET 60V 14A 52mOhm SGL P-CH
MOSFETs Pwr MOSFET 60V 14A 52mOhm SGL P-CH
auf Bestellung 1634 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.88 EUR |
| 10+ | 2.49 EUR |
| 100+ | 1.68 EUR |
| 500+ | 1.33 EUR |
| 1000+ | 1.32 EUR |
| 1500+ | 1.19 EUR |
| 3000+ | 1.09 EUR |
| NVTFS5116PLWFTAG |
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Hersteller: onsemi
Description: MOSFET P-CH 60V 6A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 7A, 10V
Power Dissipation (Max): 3.2W (Ta), 21W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 6A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 7A, 10V
Power Dissipation (Max): 3.2W (Ta), 21W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 253 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 4.14 EUR |
| 10+ | 2.65 EUR |
| 100+ | 1.8 EUR |