auf Bestellung 3302 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.46 EUR |
| 10+ | 1.8 EUR |
| 100+ | 1.22 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 0.98 EUR |
| 2500+ | 0.93 EUR |
| 5000+ | 0.85 EUR |
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Produktbewertung abgeben
Technische Details NVTFS5116PLWFTWG onsemi
Description: MOSFET P-CH 60V 6A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 52mOhm @ 7A, 10V, Power Dissipation (Max): 3.2W (Ta), 21W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-WDFN (3.3x3.3), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote NVTFS5116PLWFTWG nach Preis ab 0.99 EUR bis 2.48 EUR
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NVTFS5116PLWFTWG | Hersteller : onsemi |
 Description: MOSFET P-CH 60V 6A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 7A, 10V Power Dissipation (Max): 3.2W (Ta), 21W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 4001 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS5116PLWFTWG | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 60V 6A Automotive AEC-Q101 8-Pin WDFN EP T/R |
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NVTFS5116PLWFTWG | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 60V 6A Automotive 8-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |
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| NVTFS5116PLWFTWG | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -14A; Idm: -126A; 10W; WDFNW8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -14A Pulsed drain current: -126A Power dissipation: 10W Case: WDFNW8 Gate-source voltage: ±20V On-state resistance: 52mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NVTFS5116PLWFTWG | Hersteller : onsemi |
Description: MOSFET P-CH 60V 6A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 7A, 10V Power Dissipation (Max): 3.2W (Ta), 21W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| NVTFS5116PLWFTWG | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -14A; Idm: -126A; 10W; WDFNW8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -14A Pulsed drain current: -126A Power dissipation: 10W Case: WDFNW8 Gate-source voltage: ±20V On-state resistance: 52mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |