NVTFS5820NLWFTAG ON Semiconductor
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Technische Details NVTFS5820NLWFTAG ON Semiconductor
Description: MOSFET N-CH 60V 11A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Rds On (Max) @ Id, Vgs: 11.5mOhm @ 8.7A, 10V, Power Dissipation (Max): 3.2W (Ta), 21W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-WDFN (3.3x3.3), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1462 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote NVTFS5820NLWFTAG
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NVTFS5820NLWFTAG | Hersteller : onsemi |
Description: MOSFET N-CH 60V 11A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 8.7A, 10V Power Dissipation (Max): 3.2W (Ta), 21W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1462 pF @ 25 V Qualification: AEC-Q101 |
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NVTFS5820NLWFTAG | Hersteller : ON Semiconductor |
MOSFET Pwr MOSFET 60V 29A 11.5mOhm SGL N-CH |
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