NVTFS6H860NLTAG onsemi
Hersteller: onsemi
Description: MOSFET N-CH 80V 8.1A/30A 8WDFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 1500+ | 0.73 EUR |
| 3000+ | 0.68 EUR |
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Technische Details NVTFS6H860NLTAG onsemi
Description: MOSFET N-CH 80V 8.1A/30A 8WDFN, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: 8-WDFN (3.3x3.3), Vgs(th) (Max) @ Id: 2V @ 30µA, Power Dissipation (Max): 3.1W (Ta), 42W (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote NVTFS6H860NLTAG nach Preis ab 0.7 EUR bis 2.52 EUR
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NVTFS6H860NLTAG | onsemi |
MOSFETs T8 80V LL U8FL |
auf Bestellung 15037 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS6H860NLTAG | onsemi |
Description: MOSFET N-CH 80V 8.1A/30A 8WDFN Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 2V @ 30µA Power Dissipation (Max): 3.1W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive |
auf Bestellung 3569 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS6H860NLTAG | ON Semiconductor |
MOSFET T8 80V LL U8FL |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NVTFS6H860NLTAG |
|
Hersteller: onsemi
MOSFETs T8 80V LL U8FL
MOSFETs T8 80V LL U8FL
auf Bestellung 15037 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 2.38 EUR |
| 10+ | 1.2 EUR |
| 100+ | 0.91 EUR |
| 500+ | 0.8 EUR |
| 1000+ | 0.73 EUR |
| 1500+ | 0.7 EUR |
| NVTFS6H860NLTAG |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 8.1A/30A 8WDFN
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Description: MOSFET N-CH 80V 8.1A/30A 8WDFN
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
auf Bestellung 3569 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.52 EUR |
| 12+ | 1.6 EUR |
| 100+ | 1.07 EUR |
| 500+ | 0.84 EUR |
| NVTFS6H860NLTAG |
|
Hersteller: ON Semiconductor
MOSFET T8 80V LL U8FL
MOSFET T8 80V LL U8FL
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH