
NVTFS6H880NTAG onsemi

Description: MOSFET N-CH 80V 6.3A/21A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1498 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
13+ | 1.46 EUR |
20+ | 0.90 EUR |
100+ | 0.59 EUR |
500+ | 0.45 EUR |
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Technische Details NVTFS6H880NTAG onsemi
Description: MOSFET N-CH 80V 6.3A/21A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc), Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V, Power Dissipation (Max): 3.1W (Ta), 31W (Tc), Vgs(th) (Max) @ Id: 4V @ 20µA, Supplier Device Package: 8-WDFN (3.3x3.3), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V, Qualification: AEC-Q101.
Weitere Produktangebote NVTFS6H880NTAG nach Preis ab 0.30 EUR bis 1.49 EUR
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NVTFS6H880NTAG | Hersteller : onsemi |
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auf Bestellung 1499 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS6H880NTAG | Hersteller : ON Semiconductor |
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auf Bestellung 1470 Stücke: Lieferzeit 21-28 Tag (e) |
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NVTFS6H880NTAG | Hersteller : ON Semiconductor |
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NVTFS6H880NTAG | Hersteller : ONSEMI |
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NVTFS6H880NTAG | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |