Technische Details NVTFS6H880NTAG ON Semiconductor
Description: MOSFET N-CH 80V 6.3A/21A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc), Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V, Power Dissipation (Max): 3.1W (Ta), 31W (Tc), Vgs(th) (Max) @ Id: 4V @ 20µA, Supplier Device Package: 8-WDFN (3.3x3.3), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V, Qualification: AEC-Q101.
Weitere Produktangebote NVTFS6H880NTAG nach Preis ab 0.36 EUR bis 1.73 EUR
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NVTFS6H880NTAG | onsemi |
 Description: MOSFET N-CH 80V 6.3A/21A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS6H880NTAG | ON Semiconductor |
Trans MOSFET N-CH 80V 6.3A Automotive AEC-Q101 8-Pin WDFN EP T/R |
auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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NVTFS6H880NTAG | ON Semiconductor |
Trans MOSFET N-CH 80V 6.3A Automotive AEC-Q101 8-Pin WDFN EP T/R |
auf Bestellung 4500 Stücke: Lieferzeit 14-21 Tag (e) |
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NVTFS6H880NTAG | ON Semiconductor |
Trans MOSFET N-CH 80V 6.3A Automotive AEC-Q101 8-Pin WDFN EP T/R |
auf Bestellung 4500 Stücke: Lieferzeit 14-21 Tag (e) |
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NVTFS6H880NTAG | onsemi |
Description: MOSFET N-CH 80V 6.3A/21A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 2526 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS6H880NTAG | onsemi |
MOSFETs T8 80V U8FL |
auf Bestellung 1815 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVTFS6H880NTAG | ON Semiconductor |
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auf Bestellung 1470 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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Hersteller: onsemi
Description: MOSFET N-CH 80V 6.3A/21A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 6.3A/21A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.43 EUR |
| NVTFS6H880NTAG |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH 80V 6.3A Automotive AEC-Q101 8-Pin WDFN EP T/R
Trans MOSFET N-CH 80V 6.3A Automotive AEC-Q101 8-Pin WDFN EP T/R
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.52 EUR |
| 12000+ | 0.46 EUR |
| 18000+ | 0.43 EUR |
| 24000+ | 0.39 EUR |
| NVTFS6H880NTAG |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH 80V 6.3A Automotive AEC-Q101 8-Pin WDFN EP T/R
Trans MOSFET N-CH 80V 6.3A Automotive AEC-Q101 8-Pin WDFN EP T/R
auf Bestellung 4500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.75 EUR |
| 3000+ | 0.73 EUR |
| NVTFS6H880NTAG |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH 80V 6.3A Automotive AEC-Q101 8-Pin WDFN EP T/R
Trans MOSFET N-CH 80V 6.3A Automotive AEC-Q101 8-Pin WDFN EP T/R
auf Bestellung 4500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.75 EUR |
| 3000+ | 0.71 EUR |
| NVTFS6H880NTAG |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 6.3A/21A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 6.3A/21A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 2526 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.62 EUR |
| 21+ | 1 EUR |
| 100+ | 0.65 EUR |
| 500+ | 0.5 EUR |
| NVTFS6H880NTAG |
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Hersteller: onsemi
MOSFETs T8 80V U8FL
MOSFETs T8 80V U8FL
auf Bestellung 1815 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.73 EUR |
| 10+ | 1.07 EUR |
| 100+ | 0.7 EUR |
| 500+ | 0.54 EUR |
| 1000+ | 0.43 EUR |
| 1500+ | 0.39 EUR |
| 9000+ | 0.36 EUR |
| NVTFS6H880NTAG |
|
Hersteller: ON Semiconductor
auf Bestellung 1470 Stücke:
Lieferzeit 21-28 Tag (e)