Produkte > ONSEMI > NVTFS6H888NLTAG
NVTFS6H888NLTAG

NVTFS6H888NLTAG onsemi


nvtfs6h888nl-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 80V 4.9A/14A 8WDFN
Vgs(th) (Max) @ Id: 2V @ 15µA
Power Dissipation (Max): 2.9W (Ta), 23W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
auf Bestellung 84000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.43 EUR
3000+0.4 EUR
4500+0.38 EUR
7500+0.36 EUR
10500+0.35 EUR
15000+0.33 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details NVTFS6H888NLTAG onsemi

Description: MOSFET N-CH 80V 4.9A/14A 8WDFN, Vgs(th) (Max) @ Id: 2V @ 15µA, Power Dissipation (Max): 2.9W (Ta), 23W (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), 14A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: 8-WDFN (3.3x3.3).

Weitere Produktangebote NVTFS6H888NLTAG nach Preis ab 0.51 EUR bis 1.62 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
NVTFS6H888NLTAG NVTFS6H888NLTAG onsemi nvtfs6h888nl-d.pdf Description: MOSFET N-CH 80V 4.9A/14A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 2.9W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 2V @ 15µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 85442 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.62 EUR
18+1 EUR
100+0.66 EUR
500+0.51 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
NVTFS6H888NLTAG nvtfs6h888nl-d.pdf
NVTFS6H888NLTAG
Hersteller: onsemi
Description: MOSFET N-CH 80V 4.9A/14A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 2.9W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 2V @ 15µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 85442 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.62 EUR
18+1 EUR
100+0.66 EUR
500+0.51 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH