NVTFS8D1N08HTAG onsemi
Hersteller: onsemi
Description: MOSFET N-CHANNEL 80V 61A
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 3.8W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 61A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 1500+ | 0.81 EUR |
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Technische Details NVTFS8D1N08HTAG onsemi
Description: MOSFET N-CHANNEL 80V 61A, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Grade: Automotive, Supplier Device Package: 8-WDFN (3.3x3.3), Vgs(th) (Max) @ Id: 4V @ 270µA, Power Dissipation (Max): 3.8W (Ta), 75W (Tc), Rds On (Max) @ Id, Vgs: 8.3mOhm @ 16A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 61A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote NVTFS8D1N08HTAG nach Preis ab 0.93 EUR bis 2.75 EUR
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NVTFS8D1N08HTAG | onsemi |
Description: MOSFET N-CHANNEL 80V 61A Rds On (Max) @ Id, Vgs: 8.3mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 61A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Grade: Automotive Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 4V @ 270µA Power Dissipation (Max): 3.8W (Ta), 75W (Tc) |
auf Bestellung 2439 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVTFS8D1N08HTAG |
|
Hersteller: onsemi
Description: MOSFET N-CHANNEL 80V 61A
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 61A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 3.8W (Ta), 75W (Tc)
Description: MOSFET N-CHANNEL 80V 61A
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 61A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 3.8W (Ta), 75W (Tc)
auf Bestellung 2439 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.75 EUR |
| 11+ | 1.75 EUR |
| 100+ | 1.18 EUR |
| 500+ | 0.93 EUR |