
auf Bestellung 1058 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 3.26 EUR |
10+ | 2.08 EUR |
100+ | 1.44 EUR |
500+ | 1.22 EUR |
1000+ | 1.02 EUR |
1500+ | 0.92 EUR |
3000+ | 0.88 EUR |
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Technische Details NVTFWS005N08XLTAG onsemi
Description: T10S 80V LL NCH MOSFET U8FL HE W, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 79A (Tc), Rds On (Max) @ Id, Vgs: 5.3mOhm @ 17A, 10V, Power Dissipation (Max): 82W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 85µA, Supplier Device Package: 8-WDFNW (3.3x3.3), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V, Qualification: AEC-Q101.
Weitere Produktangebote NVTFWS005N08XLTAG
Foto | Bezeichnung | Hersteller | Beschreibung |
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NVTFWS005N08XLTAG | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 17A, 10V Power Dissipation (Max): 82W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 85µA Supplier Device Package: 8-WDFNW (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NVTFWS005N08XLTAG | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 17A, 10V Power Dissipation (Max): 82W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 85µA Supplier Device Package: 8-WDFNW (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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![]() |
NVTFWS005N08XLTAG | Hersteller : onsemi |
![]() Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 17A, 10V Power Dissipation (Max): 82W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 85µA Supplier Device Package: 8-WDFNW (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |