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NVTFWS007N08HLTAG

NVTFWS007N08HLTAG onsemi

nvtfs007n08hl-d.pdf Hersteller: onsemi
Description: 80V T8 IN U8FL HEFET PACK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 3V @ 270µA
Supplier Device Package: 8-WDFNW (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.8 EUR
3000+0.74 EUR
4500+0.71 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NVTFWS007N08HLTAG onsemi

Description: 80V T8 IN U8FL HEFET PACK, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 71A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V, Power Dissipation (Max): 3.3W (Ta), 79W (Tc), Vgs(th) (Max) @ Id: 3V @ 270µA, Supplier Device Package: 8-WDFNW (3.3x3.3), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 40 V, Qualification: AEC-Q101.

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NVTFWS007N08HLTAG NVTFWS007N08HLTAG Hersteller : onsemi nvtfs007n08hl-d.pdf Description: 80V T8 IN U8FL HEFET PACK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 3V @ 270µA
Supplier Device Package: 8-WDFNW (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 5970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.89 EUR
10+1.8 EUR
25+1.51 EUR
100+1.18 EUR
250+1.02 EUR
500+0.93 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
NVTFWS007N08HLTAG Hersteller : ONSEMI nvtfs007n08hl-d.pdf NVTFWS007N08HLTAG SMD N channel transistors
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