NVTFWS010N10MCLTAG ON Semiconductor
auf Bestellung 39000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1500+ | 0.87 EUR |
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Technische Details NVTFWS010N10MCLTAG ON Semiconductor
Description: MOSFET N-CH 100V 11.7A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 57.8A (Tc), Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V, Power Dissipation (Max): 3.2W (Ta), 77.8W (Tc), Vgs(th) (Max) @ Id: 3V @ 85µA, Supplier Device Package: 8-WDFN (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVTFWS010N10MCLTAG nach Preis ab 0.94 EUR bis 3.59 EUR
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NVTFWS010N10MCLTAG | Hersteller : onsemi |
 Description: MOSFET N-CH 100V 11.7A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 57.8A (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V Power Dissipation (Max): 3.2W (Ta), 77.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 85µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 10500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS010N10MCLTAG | Hersteller : onsemi |
MOSFETs PTNG 100V LL IN |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS010N10MCLTAG | Hersteller : onsemi |
Description: MOSFET N-CH 100V 11.7A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 57.8A (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V Power Dissipation (Max): 3.2W (Ta), 77.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 85µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 10500 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVTFWS010N10MCLTAG | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 11.7A Automotive 8-Pin WDFN EP Reel |
Produkt ist nicht verfügbar |
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NVTFWS010N10MCLTAG | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 11.7A Automotive 8-Pin WDFNW EP T/R |
Produkt ist nicht verfügbar |
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| NVTFWS010N10MCLTAG | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 57.8A; Idm: 232A; 38.9W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 57.8A Pulsed drain current: 232A Power dissipation: 38.9W Case: WDFNW8 Gate-source voltage: ±20V On-state resistance: 10.6mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NVTFWS010N10MCLTAG | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 57.8A; Idm: 232A; 38.9W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 57.8A Pulsed drain current: 232A Power dissipation: 38.9W Case: WDFNW8 Gate-source voltage: ±20V On-state resistance: 10.6mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |