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NVTFWS010N10MCLTAG

NVTFWS010N10MCLTAG onsemi

NVTFS010N10MCL-D.PDF Hersteller: onsemi
Description: MOSFET N-CH 100V 11.7A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 57.8A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 77.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 85µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+1.01 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NVTFWS010N10MCLTAG onsemi

Description: MOSFET N-CH 100V 11.7A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 57.8A (Tc), Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V, Power Dissipation (Max): 3.2W (Ta), 77.8W (Tc), Vgs(th) (Max) @ Id: 3V @ 85µA, Supplier Device Package: 8-WDFN (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V, Grade: Automotive, Qualification: AEC-Q101.

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NVTFWS010N10MCLTAG NVTFWS010N10MCLTAG Hersteller : onsemi NVTFS010N10MCL_D-1625747.pdf MOSFETs PTNG 100V LL IN
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.19 EUR
10+2.11 EUR
100+1.46 EUR
500+1.18 EUR
1500+1.04 EUR
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NVTFWS010N10MCLTAG NVTFWS010N10MCLTAG Hersteller : onsemi NVTFS010N10MCL-D.PDF Description: MOSFET N-CH 100V 11.7A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 57.8A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 77.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 85µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.59 EUR
10+2.31 EUR
100+1.56 EUR
500+1.25 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
NVTFWS010N10MCLTAG Hersteller : ON Semiconductor nvtfs010n10mcl-d.pdf Trans MOSFET N-CH 100V 11.7A Automotive 8-Pin WDFN EP Reel
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NVTFWS010N10MCLTAG Hersteller : ONSEMI NVTFS010N10MCL-D.PDF NVTFWS010N10MCLTAG SMD N channel transistors
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