NVTFWS012P03P8ZTAG onsemi
Hersteller: onsemiDescription: PT8P PORTFOLIO EXPANSION
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Power Dissipation (Max): 2.4W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1535 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 1237 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 1.9 EUR |
| 15+ | 1.19 EUR |
| 100+ | 0.79 EUR |
| 500+ | 0.61 EUR |
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Technische Details NVTFWS012P03P8ZTAG onsemi
Description: PT8P PORTFOLIO EXPANSION, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 49A (Tc), Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V, Power Dissipation (Max): 2.4W (Ta), 44W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-WDFN (3.3x3.3), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1535 pF @ 15 V, Qualification: AEC-Q101.
Weitere Produktangebote NVTFWS012P03P8ZTAG
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NVTFWS012P03P8ZTAG | Hersteller : onsemi |
Description: PT8P PORTFOLIO EXPANSION Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V Power Dissipation (Max): 2.4W (Ta), 44W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1535 pF @ 15 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| NVTFWS012P03P8ZTAG | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -11.7A; Idm: -47A; 2.4W; WDFN8 Type of transistor: P-MOSFET Drain-source voltage: -30V Drain current: -11.7A Power dissipation: 2.4W Case: WDFN8 Gate-source voltage: ±25V On-state resistance: 11.3mΩ Mounting: SMD Gate charge: 36nC Kind of channel: enhancement Kind of package: reel; tape Polarisation: unipolar Pulsed drain current: -47A |
Produkt ist nicht verfügbar |