NVTFWS052P04M8LTAG onsemi
Hersteller: onsemi
Description: MOSFET P-CH 40V 4.7A/13.2A 8WDFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.4V @ 95µA
Power Dissipation (Max): 2.9W (Ta), 23W (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 13.2A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details NVTFWS052P04M8LTAG onsemi
Description: MOSFET P-CH 40V 4.7A/13.2A 8WDFN, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-WDFN (3.3x3.3), Vgs(th) (Max) @ Id: 2.4V @ 95µA, Power Dissipation (Max): 2.9W (Ta), 23W (Tc), Rds On (Max) @ Id, Vgs: 69mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 13.2A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote NVTFWS052P04M8LTAG nach Preis ab 0.56 EUR bis 1.7 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NVTFWS052P04M8LTAG | onsemi |
MOSFETs Power MOSFET, Single P-Channel, -40V, 69mohm, -13.2A |
auf Bestellung 8430 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
NVTFWS052P04M8LTAG | onsemi |
Description: MOSFET P-CH 40V 4.7A/13.2A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 13.2A (Tc) Rds On (Max) @ Id, Vgs: 69mOhm @ 5A, 10V Power Dissipation (Max): 2.9W (Ta), 23W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 95µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NVTFWS052P04M8LTAG |
|
Hersteller: onsemi
MOSFETs Power MOSFET, Single P-Channel, -40V, 69mohm, -13.2A
MOSFETs Power MOSFET, Single P-Channel, -40V, 69mohm, -13.2A
auf Bestellung 8430 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.62 EUR |
| 10+ | 1.29 EUR |
| 100+ | 0.89 EUR |
| 500+ | 0.79 EUR |
| 1000+ | 0.68 EUR |
| 1500+ | 0.57 EUR |
| 3000+ | 0.56 EUR |
| NVTFWS052P04M8LTAG |
|
Hersteller: onsemi
Description: MOSFET P-CH 40V 4.7A/13.2A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 13.2A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 5A, 10V
Power Dissipation (Max): 2.9W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 95µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 4.7A/13.2A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 13.2A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 5A, 10V
Power Dissipation (Max): 2.9W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 95µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.7 EUR |
| 15+ | 1.48 EUR |
| 100+ | 1.02 EUR |
| 500+ | 0.86 EUR |