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NVTJD4001NT1G

NVTJD4001NT1G onsemi

ntjd4001n-d.pdf
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 0.25A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 272mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 250mA
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 57000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.16 EUR
6000+0.15 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NVTJD4001NT1G onsemi

Description: MOSFET 2N-CH 30V 0.25A SC88, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 272mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 250mA, Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V, Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V, Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V, Vgs(th) (Max) @ Id: 1.5V @ 100µA, Supplier Device Package: SC-88/SC70-6/SOT-363, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote NVTJD4001NT1G nach Preis ab 0.13 EUR bis 0.77 EUR

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NVTJD4001NT1G NVTJD4001NT1G ONSEMI NVTJD4001NT1G.PDF Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.18A
Power dissipation: 0.272W
On-state resistance: 1.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
auf Bestellung 2662 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
232+0.31 EUR
264+0.27 EUR
382+0.19 EUR
443+0.16 EUR
532+0.13 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
NVTJD4001NT1G NVTJD4001NT1G onsemi ntjd4001n-d.pdf MOSFETs NFET 30V 250MA 1.5OH
auf Bestellung 930745 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.74 EUR
10+0.45 EUR
100+0.29 EUR
500+0.22 EUR
1000+0.19 EUR
3000+0.16 EUR
6000+0.15 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
NVTJD4001NT1G NVTJD4001NT1G onsemi ntjd4001n-d.pdf Description: MOSFET 2N-CH 30V 0.25A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 272mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 250mA
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 58280 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
37+0.48 EUR
100+0.3 EUR
500+0.23 EUR
1000+0.2 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
NVTJD4001NT1G NVTJD4001NT1G.PDF
NVTJD4001NT1G
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.18A
Power dissipation: 0.272W
On-state resistance: 1.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
auf Bestellung 2662 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
232+0.31 EUR
264+0.27 EUR
382+0.19 EUR
443+0.16 EUR
532+0.13 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
NVTJD4001NT1G ntjd4001n-d.pdf
NVTJD4001NT1G
Hersteller: onsemi
MOSFETs NFET 30V 250MA 1.5OH
auf Bestellung 930745 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.74 EUR
10+0.45 EUR
100+0.29 EUR
500+0.22 EUR
1000+0.19 EUR
3000+0.16 EUR
6000+0.15 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
NVTJD4001NT1G ntjd4001n-d.pdf
NVTJD4001NT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 0.25A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 272mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 250mA
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 58280 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
37+0.48 EUR
100+0.3 EUR
500+0.23 EUR
1000+0.2 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH