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NVTR01P02LT1G

NVTR01P02LT1G onsemi

ntr1p02lt1-d.pdf Hersteller: onsemi
Description: MOSFET P-CH 20V 1.3A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 750mA, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 5 V
auf Bestellung 37 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
22+1.2 EUR
29+ 0.9 EUR
Mindestbestellmenge: 22
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Technische Details NVTR01P02LT1G onsemi

Description: MOSFET P-CH 20V 1.3A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), Rds On (Max) @ Id, Vgs: 220mOhm @ 750mA, 4.5V, Power Dissipation (Max): 400mW (Ta), Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 5 V.

Weitere Produktangebote NVTR01P02LT1G nach Preis ab 0.44 EUR bis 1.38 EUR

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Preis ohne MwSt
NVTR01P02LT1G NVTR01P02LT1G Hersteller : onsemi NTR1P02LT1_D-1814290.pdf MOSFET PFET 20V 0.160R TR
auf Bestellung 4033 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
38+1.38 EUR
51+ 1.02 EUR
100+ 0.64 EUR
500+ 0.44 EUR
Mindestbestellmenge: 38
NVTR01P02LT1G Hersteller : ON Semiconductor ntr1p02lt1-d.pdf
auf Bestellung 2758 Stücke:
Lieferzeit 21-28 Tag (e)
NVTR01P02LT1G NVTR01P02LT1G Hersteller : onsemi ntr1p02lt1-d.pdf Description: MOSFET P-CH 20V 1.3A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 750mA, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 5 V
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