NVTYS029N08HTWG onsemi
Hersteller: onsemi
Description: T8 80V N-CH SG IN LFPAK33
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 4V @ 20µA
Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
Rds On (Max) @ Id, Vgs: 32.4mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 369 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Qualification: AEC-Q101
Grade: Automotive
| Anzahl | Preis |
|---|---|
| 3000+ | 0.55 EUR |
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Technische Details NVTYS029N08HTWG onsemi
Description: T8 80V N-CH SG IN LFPAK33, Supplier Device Package: 8-LFPAK, Vgs(th) (Max) @ Id: 4V @ 20µA, Power Dissipation (Max): 3.1W (Ta), 33W (Tc), Rds On (Max) @ Id, Vgs: 32.4mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 21A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-1205, 8-LFPAK56, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 369 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote NVTYS029N08HTWG nach Preis ab 0.63 EUR bis 2.11 EUR
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NVTYS029N08HTWG | onsemi |
Description: T8 80V N-CH SG IN LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 32.4mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 369 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 5995 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NVTYS029N08HTWG |
|
Hersteller: onsemi
Description: T8 80V N-CH SG IN LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32.4mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 369 pF @ 40 V
Qualification: AEC-Q101
Description: T8 80V N-CH SG IN LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32.4mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 369 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 5995 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 2.11 EUR |
| 14+ | 1.33 EUR |
| 100+ | 0.88 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.63 EUR |