NVTYS040N10MCLTWG onsemi
Hersteller: onsemiDescription: PTNG 100V LL, SINGLE NCH, LFPAK3
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Supplier Device Package: 8-LFPAK
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Power Dissipation (Max): 3.1W (Ta), 37W (Tc)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 564 pF @ 50 V
Qualification: AEC-Q101
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 40.9mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 27µA
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Technische Details NVTYS040N10MCLTWG onsemi
Description: PTNG 100V LL, SINGLE NCH, LFPAK3, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Supplier Device Package: 8-LFPAK, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Power Dissipation (Max): 3.1W (Ta), 37W (Tc), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 564 pF @ 50 V, Qualification: AEC-Q101, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 20A (Tc), Rds On (Max) @ Id, Vgs: 40.9mOhm @ 5A, 10V, Vgs(th) (Max) @ Id: 3V @ 27µA.
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NVTYS040N10MCLTWG | Hersteller : onsemi |
Description: PTNG 100V LL, SINGLE NCH, LFPAK3 Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 40.9mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 3V @ 27µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 564 pF @ 50 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| NVTYS040N10MCLTWG | Hersteller : onsemi |
MOSFET MOSFET - Power, Single, N-Channel, |
Produkt ist nicht verfügbar |