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NVTYS040N10MCLTWG

NVTYS040N10MCLTWG onsemi

nvtys040n10mcl-d.pdf Hersteller: onsemi
Description: PTNG 100V LL, SINGLE NCH, LFPAK3
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 40.9mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 3V @ 27µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 564 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.29 EUR
13+1.44 EUR
100+0.96 EUR
500+0.75 EUR
1000+0.69 EUR
Mindestbestellmenge: 8
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Technische Details NVTYS040N10MCLTWG onsemi

Description: PTNG 100V LL, SINGLE NCH, LFPAK3, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 20A (Tc), Rds On (Max) @ Id, Vgs: 40.9mOhm @ 5A, 10V, Power Dissipation (Max): 3.1W (Ta), 37W (Tc), Vgs(th) (Max) @ Id: 3V @ 27µA, Supplier Device Package: 8-LFPAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 564 pF @ 50 V, Qualification: AEC-Q101.

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NVTYS040N10MCLTWG NVTYS040N10MCLTWG Hersteller : onsemi nvtys040n10mcl-d.pdf Description: PTNG 100V LL, SINGLE NCH, LFPAK3
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 40.9mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 3V @ 27µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 564 pF @ 50 V
Qualification: AEC-Q101
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NVTYS040N10MCLTWG Hersteller : onsemi nvtys040n10mcl-d.pdf MOSFETs MOSFET - Power, Single, N-Channel,
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