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| Anzahl | Preis |
|---|---|
| 1+ | 762.87 EUR |
| 12+ | 664.82 EUR |
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Technische Details NVVR26A120M1WSS onsemi
Description: MOSFET 2N-CH 1200V AHPM15-CDI, Packaging: Tube, Package / Case: 15-PowerDIP Module (2.441", 62.00mm), Mounting Type: Through Hole, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 1kW (Tj), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 400A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 31700pF @ 800V, Rds On (Max) @ Id, Vgs: 2.6mOhm @ 400A, 20V, Gate Charge (Qg) (Max) @ Vgs: 1.75µC @ 20V, Vgs(th) (Max) @ Id: 3.2V @ 150mA, Supplier Device Package: AHPM15-CDI, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVVR26A120M1WSS
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| NVVR26A120M1WSS | Hersteller : ON Semiconductor |
 MOSFET, Silicon Carbide SiC Modules |
Produkt ist nicht verfügbar |
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NVVR26A120M1WSS | Hersteller : onsemi |
Description: MOSFET 2N-CH 1200V AHPM15-CDI Packaging: Tube Package / Case: 15-PowerDIP Module (2.441", 62.00mm) Mounting Type: Through Hole Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1kW (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 400A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 31700pF @ 800V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 400A, 20V Gate Charge (Qg) (Max) @ Vgs: 1.75µC @ 20V Vgs(th) (Max) @ Id: 3.2V @ 150mA Supplier Device Package: AHPM15-CDI Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| NVVR26A120M1WSS | Hersteller : ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 400A; AHPM5-CDI; screw,THT Case: AHPM5-CDI Topology: MOSFET half-bridge Kind of package: tube Type of semiconductor module: MOSFET transistor Electrical mounting: screw; THT Technology: SiC Semiconductor structure: transistor/transistor Gate-source voltage: -10...25V On-state resistance: 4.6mΩ Drain current: 400A Power dissipation: 1kW Drain-source voltage: 1.2kV |
Produkt ist nicht verfügbar |