NVVR26A120M1WSS onsemi
Hersteller: onsemiDescription: MOSFET 2N-CH 1200V AHPM15-CDI
Packaging: Tube
Package / Case: 15-PowerDIP Module (2.441", 62.00mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1kW (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 31700pF @ 800V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 400A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1.75µC @ 20V
Vgs(th) (Max) @ Id: 3.2V @ 150mA
Supplier Device Package: AHPM15-CDI
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 1356.26 EUR |
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Technische Details NVVR26A120M1WSS onsemi
Description: MOSFET 2N-CH 1200V AHPM15-CDI, Packaging: Tube, Package / Case: 15-PowerDIP Module (2.441", 62.00mm), Mounting Type: Through Hole, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 1kW (Tj), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 400A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 31700pF @ 800V, Rds On (Max) @ Id, Vgs: 2.6mOhm @ 400A, 20V, Gate Charge (Qg) (Max) @ Vgs: 1.75µC @ 20V, Vgs(th) (Max) @ Id: 3.2V @ 150mA, Supplier Device Package: AHPM15-CDI, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVVR26A120M1WSS nach Preis ab 1411.26 EUR bis 1414.27 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NVVR26A120M1WSS | Hersteller : onsemi |
Discrete Semiconductor Modules SIC A1HPM 1200 V |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVVR26A120M1WSS | Hersteller : ON Semiconductor |
MOSFET, Silicon Carbide SiC Modules |
Produkt ist nicht verfügbar |