NVVR26A120M1WST onsemi
Hersteller: onsemiDescription: MOSFET 2N-CH 1200V AHPM15-CDA
Packaging: Tube
Package / Case: 15-PowerDIP Module (2.441", 62.00mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1kW (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 31700pF @ 800V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 400A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1.75µC @ 20V
Vgs(th) (Max) @ Id: 3.2V @ 150mA
Supplier Device Package: AHPM15-CDA
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 51 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 581.5 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NVVR26A120M1WST onsemi
Description: MOSFET 2N-CH 1200V AHPM15-CDA, Packaging: Tube, Package / Case: 15-PowerDIP Module (2.441", 62.00mm), Mounting Type: Through Hole, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 1kW (Tj), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 400A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 31700pF @ 800V, Rds On (Max) @ Id, Vgs: 2.6mOhm @ 400A, 20V, Gate Charge (Qg) (Max) @ Vgs: 1.75µC @ 20V, Vgs(th) (Max) @ Id: 3.2V @ 150mA, Supplier Device Package: AHPM15-CDA, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVVR26A120M1WST
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
NVVR26A120M1WST | Hersteller : onsemi |
MOSFET Modules SIC A1HPM 1200 V |
Produkt ist nicht verfügbar |
|
| NVVR26A120M1WST | Hersteller : ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 400A; AHPM5-CDA; screw,THT Case: AHPM5-CDA Topology: MOSFET half-bridge Kind of package: tube Type of semiconductor module: MOSFET transistor Electrical mounting: screw; THT Technology: SiC Semiconductor structure: transistor/transistor Gate-source voltage: -10...25V On-state resistance: 4.6mΩ Drain current: 400A Power dissipation: 1kW Drain-source voltage: 1.2kV |
Produkt ist nicht verfügbar |