NVXK2TR40WXT onsemi
Hersteller: onsemiDescription: MOSFET 4N-CH 1200V 27A APM32
Packaging: Tube
Package / Case: 32-PowerDIP Module (1.311", 33.30mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 319W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1789pF @ 800V
Rds On (Max) @ Id, Vgs: 59mOhm @ 35A, 20V
Gate Charge (Qg) (Max) @ Vgs: 106nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: APM32
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 114 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 98.67 EUR |
| 10+ | 75.85 EUR |
| 100+ | 74.97 EUR |
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Technische Details NVXK2TR40WXT onsemi
Description: MOSFET 4N-CH 1200V 27A APM32, Packaging: Tube, Package / Case: 32-PowerDIP Module (1.311", 33.30mm), Mounting Type: Through Hole, Configuration: 4 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 319W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 27A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1789pF @ 800V, Rds On (Max) @ Id, Vgs: 59mOhm @ 35A, 20V, Gate Charge (Qg) (Max) @ Vgs: 106nC @ 20V, Vgs(th) (Max) @ Id: 4.3V @ 10mA, Supplier Device Package: APM32, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVXK2TR40WXT nach Preis ab 87.3 EUR bis 115.23 EUR
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NVXK2TR40WXT | Hersteller : onsemi |
MOSFET Modules APM32 SIC H-BRIDGE POWER MODULE |
auf Bestellung 44 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVXK2TR40WXT | Hersteller : ON Semiconductor |
SiC Power MOSFET H-Bridge Power Module |
Produkt ist nicht verfügbar |