auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 106.78 EUR |
| 10+ | 96.76 EUR |
| 30+ | 93.42 EUR |
| 50+ | 90.09 EUR |
| 100+ | 86.75 EUR |
| 250+ | 85.92 EUR |
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Technische Details NVXK2TR40WXT onsemi
Description: APM32 SIC H-BRIDGE POWER MODULE, Packaging: Tube, Package / Case: 32-PowerDIP Module (1.311", 33.30mm), Mounting Type: Through Hole, Configuration: 4 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 319W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 27A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1789pF @ 800V, Rds On (Max) @ Id, Vgs: 59mOhm @ 35A, 20V, Gate Charge (Qg) (Max) @ Vgs: 106nC @ 20V, FET Feature: Silicon Carbide (SiC), Vgs(th) (Max) @ Id: 4.3V @ 10mA, Supplier Device Package: APM32, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVXK2TR40WXT
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| NVXK2TR40WXT | Hersteller : ON Semiconductor |
 SiC Power MOSFET H-Bridge Power Module |
Produkt ist nicht verfügbar |
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NVXK2TR40WXT | Hersteller : onsemi |
Description: APM32 SIC H-BRIDGE POWER MODULE Packaging: Tube Package / Case: 32-PowerDIP Module (1.311", 33.30mm) Mounting Type: Through Hole Configuration: 4 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 319W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1789pF @ 800V Rds On (Max) @ Id, Vgs: 59mOhm @ 35A, 20V Gate Charge (Qg) (Max) @ Vgs: 106nC @ 20V FET Feature: Silicon Carbide (SiC) Vgs(th) (Max) @ Id: 4.3V @ 10mA Supplier Device Package: APM32 Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |