NVXK2VR40WXT2 onsemi

Description: MOSFET 6N-CH 1200V 55A APM32, Packaging: Tube, Package / Case: 32-PowerDIP Module (1.449", 36.80mm), Mounting Type: Through Hole, Configuration: 6 N-Channel (3-Phase Bridge), Operating Temperature: -55°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 319W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 55A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1789pF @ 800V, Rds On (Max) @ Id, Vgs: 59mOhm @ 35A, 20V, Gate Charge (Qg) (Max) @ Vgs: 106nC @ 20V, Vgs(th) (Max) @ Id: 4.3V @ 10mA, Supplier Device Package: APM32, Grade: Automotive, Qualification: AEC-Q101.