| Anzahl | Privatkunde |
|---|---|
| 1+ | 160.7 EUR |
| 10+ | 138.8 EUR |
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Technische Details NVXK2VR40WXT2 onsemi
Description: MOSFET 6N-CH 1200V 55A APM32, Packaging: Tube, Package / Case: 32-PowerDIP Module (1.449", 36.80mm), Mounting Type: Through Hole, Configuration: 6 N-Channel (3-Phase Bridge), Operating Temperature: -55°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 319W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 55A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1789pF @ 800V, Rds On (Max) @ Id, Vgs: 59mOhm @ 35A, 20V, Gate Charge (Qg) (Max) @ Vgs: 106nC @ 20V, Vgs(th) (Max) @ Id: 4.3V @ 10mA, Supplier Device Package: APM32, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVXK2VR40WXT2 nach Preis ab 129.2 EUR bis 165.87 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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NVXK2VR40WXT2 | onsemi |
 Description: MOSFET 6N-CH 1200V 55A APM32Packaging: Tube Package / Case: 32-PowerDIP Module (1.449", 36.80mm) Mounting Type: Through Hole Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 319W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1789pF @ 800V Rds On (Max) @ Id, Vgs: 59mOhm @ 35A, 20V Gate Charge (Qg) (Max) @ Vgs: 106nC @ 20V Vgs(th) (Max) @ Id: 4.3V @ 10mA Supplier Device Package: APM32 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 22 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NVXK2VR40WXT2 |
|
Hersteller: onsemi
Description: MOSFET 6N-CH 1200V 55A APM32
Packaging: Tube
Package / Case: 32-PowerDIP Module (1.449", 36.80mm)
Mounting Type: Through Hole
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 319W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1789pF @ 800V
Rds On (Max) @ Id, Vgs: 59mOhm @ 35A, 20V
Gate Charge (Qg) (Max) @ Vgs: 106nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: APM32
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 6N-CH 1200V 55A APM32
Packaging: Tube
Package / Case: 32-PowerDIP Module (1.449", 36.80mm)
Mounting Type: Through Hole
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 319W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1789pF @ 800V
Rds On (Max) @ Id, Vgs: 59mOhm @ 35A, 20V
Gate Charge (Qg) (Max) @ Vgs: 106nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: APM32
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 165.87 EUR |
| 10+ | 129.2 EUR |