NVXR17S90M2SPC onsemi
Hersteller: onsemi
Discrete Semiconductor Modules Silicon Carbide (SiC) Module - EliteSiC Power Module for Traction Inverter, Single Side Direct Cooling, 1.7mOhm, 900V, 6-Pack VE-Trac Direct SiC 1.7mOhm 900V Power Module
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Technische Details NVXR17S90M2SPC onsemi
Description: SIC 900V 8D MOSFET V-SSDC SPC, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 6 N-Channel (3-Phase Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 1kW (Tj), Drain to Source Voltage (Vdss): 900V, Current - Continuous Drain (Id) @ 25°C: 620A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 45000pF @ 400V, Rds On (Max) @ Id, Vgs: 2.1mOhm @ 620A, 18V, Gate Charge (Qg) (Max) @ Vgs: 2400nC @ 18V, Vgs(th) (Max) @ Id: 4.3V @ 200mA, Supplier Device Package: SSDC39, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVXR17S90M2SPC nach Preis ab 4774.77 EUR bis 4774.77 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| NVXR17S90M2SPC | onsemi |
Description: SIC 900V 8D MOSFET V-SSDC SPC Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1kW (Tj) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 620A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 45000pF @ 400V Rds On (Max) @ Id, Vgs: 2.1mOhm @ 620A, 18V Gate Charge (Qg) (Max) @ Vgs: 2400nC @ 18V Vgs(th) (Max) @ Id: 4.3V @ 200mA Supplier Device Package: SSDC39 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2164 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVXR17S90M2SPC |
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Hersteller: onsemi
Description: SIC 900V 8D MOSFET V-SSDC SPC
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1kW (Tj)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 620A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 45000pF @ 400V
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 620A, 18V
Gate Charge (Qg) (Max) @ Vgs: 2400nC @ 18V
Vgs(th) (Max) @ Id: 4.3V @ 200mA
Supplier Device Package: SSDC39
Grade: Automotive
Qualification: AEC-Q101
Description: SIC 900V 8D MOSFET V-SSDC SPC
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1kW (Tj)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 620A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 45000pF @ 400V
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 620A, 18V
Gate Charge (Qg) (Max) @ Vgs: 2400nC @ 18V
Vgs(th) (Max) @ Id: 4.3V @ 200mA
Supplier Device Package: SSDC39
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2164 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 4774.77 EUR |