NVXR22S90M2SPB onsemi
Hersteller: onsemi
MOSFET Modules Silicon Carbide (SiC) Module - EliteSiC Power Module for Traction Inverter, Single Side Direct Cooling, 2.2mOhm, 900V, 6-Pack
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Technische Details NVXR22S90M2SPB onsemi
Description: SIC 900V 6D MOSFET V-SSDC SPB, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 6 N-Channel (3-Phase Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 900W (Tj), Drain to Source Voltage (Vdss): 900V, Current - Continuous Drain (Id) @ 25°C: 510A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 35000pF @ 400V, Rds On (Max) @ Id, Vgs: 2.7mOhm @ 510A, 18V, Gate Charge (Qg) (Max) @ Vgs: 1800nC @ 18V, Vgs(th) (Max) @ Id: 4.3V @ 150mA, Supplier Device Package: SSDC39, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVXR22S90M2SPB
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| NVXR22S90M2SPB | onsemi |
Description: SIC 900V 6D MOSFET V-SSDC SPB Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 900W (Tj) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 510A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 35000pF @ 400V Rds On (Max) @ Id, Vgs: 2.7mOhm @ 510A, 18V Gate Charge (Qg) (Max) @ Vgs: 1800nC @ 18V Vgs(th) (Max) @ Id: 4.3V @ 150mA Supplier Device Package: SSDC39 Grade: Automotive Qualification: AEC-Q101 |
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Im Einkaufswagen Stück im Wert von UAH |
| NVXR22S90M2SPB |
|
Hersteller: onsemi
Description: SIC 900V 6D MOSFET V-SSDC SPB
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 900W (Tj)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 510A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 35000pF @ 400V
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 510A, 18V
Gate Charge (Qg) (Max) @ Vgs: 1800nC @ 18V
Vgs(th) (Max) @ Id: 4.3V @ 150mA
Supplier Device Package: SSDC39
Grade: Automotive
Qualification: AEC-Q101
Description: SIC 900V 6D MOSFET V-SSDC SPB
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 900W (Tj)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 510A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 35000pF @ 400V
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 510A, 18V
Gate Charge (Qg) (Max) @ Vgs: 1800nC @ 18V
Vgs(th) (Max) @ Id: 4.3V @ 150mA
Supplier Device Package: SSDC39
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH